Vertical-cavity surface-emitting laser with a thin metal mirror fabricated by double implantation using a tungsten wire mask

Guotong Du*, Kathleen A. Stair, Gregory Devane, Jianping Zhang, R. P H Chang, C. W. White, Xuemei Li, Zhiling Wang, Ying Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We have devised a novel vertical-cavity surface-emitting laser structure. The epitaxial layers have been grown by molecular beam epitaxy (MBE). The bottom mirror consists of 30.5 pairs of Al0.1Ga0.9As/AlAs multilayer distributed Bragg reflector (DBR). The top mirror is a hybrid reflector consisting of 8.5 pairs of Al0.1Ga0.9As/AlAs multilayer and a semi-transparent metal film. The structure is obtained by two He ion implantations using tungsten wires as an implant mask. The lowest threshold current is 8.2 mA, and the highest peak light output power is 1.8 mW under room-temperature cw conditions.

Original languageEnglish (US)
Pages (from-to)1734-1736
Number of pages3
JournalSemiconductor Science and Technology
Volume11
Issue number11
DOIs
StatePublished - 1996

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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