A new, planar, surface-grid, field-controlled thyristor (FCT) structure is described. The structure is fabricated by using orientation-dependent (preferential) etching and selective vapor epitaxial growth to obtain vertical grid walls. The resulting high channel-length-to-width aspect ratio produces devices with high blocking gains and fast gate turnoff speeds. Devices have been fabricated with the capability of blocking more than 1000 V with an applied grid bias of 32 V, and simultaneously exhibiting a low forward voltage drop in the on-state. These surface-grid devices exhibit gate turnoff capability with turnoff times of less than 500 ns at a rated cathode-anode current of 1 A.
|Original language||English (US)|
|Number of pages||5|
|Journal||IEEE Transactions on Electron Devices|
|State||Published - Oct 1978|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering