Vertical channel field-controlled thyristors with high gain and fast switching speeds

Bruce W. Wessels, B. Jayant Baliga

Research output: Contribution to journalArticlepeer-review

27 Scopus citations


A new, planar, surface-grid, field-controlled thyristor (FCT) structure is described. The structure is fabricated by using orientation-dependent (preferential) etching and selective vapor epitaxial growth to obtain vertical grid walls. The resulting high channel-length-to-width aspect ratio produces devices with high blocking gains and fast gate turnoff speeds. Devices have been fabricated with the capability of blocking more than 1000 V with an applied grid bias of 32 V, and simultaneously exhibiting a low forward voltage drop in the on-state. These surface-grid devices exhibit gate turnoff capability with turnoff times of less than 500 ns at a rated cathode-anode current of 1 A.

Original languageEnglish (US)
Pages (from-to)1261-1265
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number10
StatePublished - Oct 1978

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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