Vertical confinement and interface effects on the microstructure and charge transport of P3HT thin films

Leslie H. Jimison; Scott Himmelberger; Duc T. Duong; Jonathan Rivnay; Michael F. Toney; Alberto Salleo

doi:10.1002/polb.23265

Vertical confinement and interface effects on the microstructure and charge transport of P3HT thin films

Leslie H. Jimison, Scott Himmelberger, Duc T. Duong, Jonathan Rivnay, Michael F. Toney, Alberto Salleo^*

^*Corresponding author for this work

Biomedical Engineering

Research output: Contribution to journal › Article › peer-review

88 Scopus citations

Abstract

Using X-ray diffraction-based pole figures, we present quantitative analysis of the microstructure of poly(3-hexylthiophene) thin films of varying thicknesses, which allows us to determine the crystallinity and microstructure at the semiconductor-dielectric interface. We find that the interface is approximately one fourth as crystalline as the bulk of the material. Furthermore, the use of a self-assembled monolayer (SAM) enhances the density of interface-nucleated crystallites by a factor of ∼20. Charge transport measurements as a function of film thickness correlate with interface crystallinity. Hence, we establish the crucial role of SAMs as nucleating agents for increasing carrier mobility in field-effect devices.

Original language	English (US)
Pages (from-to)	611-620
Number of pages	10
Journal	Journal of Polymer Science, Part B: Polymer Physics
Volume	51
Issue number	7
DOIs	https://doi.org/10.1002/polb.23265
State	Published - Apr 1 2013

Keywords

X-ray
charge transport
crystallization
structure-property relations
thin films

ASJC Scopus subject areas

Condensed Matter Physics
Physical and Theoretical Chemistry
Polymers and Plastics
Materials Chemistry

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10.1002/polb.23265

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abstract = "Using X-ray diffraction-based pole figures, we present quantitative analysis of the microstructure of poly(3-hexylthiophene) thin films of varying thicknesses, which allows us to determine the crystallinity and microstructure at the semiconductor-dielectric interface. We find that the interface is approximately one fourth as crystalline as the bulk of the material. Furthermore, the use of a self-assembled monolayer (SAM) enhances the density of interface-nucleated crystallites by a factor of ∼20. Charge transport measurements as a function of film thickness correlate with interface crystallinity. Hence, we establish the crucial role of SAMs as nucleating agents for increasing carrier mobility in field-effect devices.",

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AU - Jimison, Leslie H.

AU - Himmelberger, Scott

AU - Duong, Duc T.

AU - Rivnay, Jonathan

AU - Toney, Michael F.

AU - Salleo, Alberto

PY - 2013/4/1

Y1 - 2013/4/1

N2 - Using X-ray diffraction-based pole figures, we present quantitative analysis of the microstructure of poly(3-hexylthiophene) thin films of varying thicknesses, which allows us to determine the crystallinity and microstructure at the semiconductor-dielectric interface. We find that the interface is approximately one fourth as crystalline as the bulk of the material. Furthermore, the use of a self-assembled monolayer (SAM) enhances the density of interface-nucleated crystallites by a factor of ∼20. Charge transport measurements as a function of film thickness correlate with interface crystallinity. Hence, we establish the crucial role of SAMs as nucleating agents for increasing carrier mobility in field-effect devices.

AB - Using X-ray diffraction-based pole figures, we present quantitative analysis of the microstructure of poly(3-hexylthiophene) thin films of varying thicknesses, which allows us to determine the crystallinity and microstructure at the semiconductor-dielectric interface. We find that the interface is approximately one fourth as crystalline as the bulk of the material. Furthermore, the use of a self-assembled monolayer (SAM) enhances the density of interface-nucleated crystallites by a factor of ∼20. Charge transport measurements as a function of film thickness correlate with interface crystallinity. Hence, we establish the crucial role of SAMs as nucleating agents for increasing carrier mobility in field-effect devices.

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KW - charge transport

KW - crystallization

KW - structure-property relations

KW - thin films

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Vertical confinement and interface effects on the microstructure and charge transport of P3HT thin films

Abstract

Keywords

ASJC Scopus subject areas

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