Vertical electrical conductance in artificial Si/Nb multilayers

S. N. Song; J. B. Ketterson

doi:10.1016/0038-1098(90)90218-Z

Vertical electrical conductance in artificial Si/Nb multilayers

S. N. Song^*, J. B. Ketterson

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Both the vertical and in-plane resistivities of Si/Nb multilayer films with different modulation wavelengths have been measured between 2 and 300 K, yielding an anisotropy ratio which can be over 10⁵. While the in-plane transport in the normal state is metallic-like, the vertical conductance changes from phonon-assisted hopping to weak localization as the thickness of the Si layer is reduced, and is dominated by quantum mechanical tunneling at low temperatures.

Original language	English (US)
Pages (from-to)	651-655
Number of pages	5
Journal	Solid State Communications
Volume	75
Issue number	8
DOIs	https://doi.org/10.1016/0038-1098(90)90218-Z
State	Published - Aug 1990

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(90)90218-Z

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title = "Vertical electrical conductance in artificial Si/Nb multilayers",

abstract = "Both the vertical and in-plane resistivities of Si/Nb multilayer films with different modulation wavelengths have been measured between 2 and 300 K, yielding an anisotropy ratio which can be over 105. While the in-plane transport in the normal state is metallic-like, the vertical conductance changes from phonon-assisted hopping to weak localization as the thickness of the Si layer is reduced, and is dominated by quantum mechanical tunneling at low temperatures.",

author = "Song, {S. N.} and Ketterson, {J. B.}",

note = "Funding Information: Acknowledgements - We are grateful to K.E. Gray, H. Busta, A. Garg, S. Hues, D.X. Li, and B. Davis for valuable discussions. This work was supported by the NSF program under grant DMR-8520280.",

year = "1990",

month = aug,

doi = "10.1016/0038-1098(90)90218-Z",

language = "English (US)",

volume = "75",

pages = "651--655",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "8",

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T1 - Vertical electrical conductance in artificial Si/Nb multilayers

AU - Song, S. N.

AU - Ketterson, J. B.

N1 - Funding Information: Acknowledgements - We are grateful to K.E. Gray, H. Busta, A. Garg, S. Hues, D.X. Li, and B. Davis for valuable discussions. This work was supported by the NSF program under grant DMR-8520280.

PY - 1990/8

Y1 - 1990/8

N2 - Both the vertical and in-plane resistivities of Si/Nb multilayer films with different modulation wavelengths have been measured between 2 and 300 K, yielding an anisotropy ratio which can be over 105. While the in-plane transport in the normal state is metallic-like, the vertical conductance changes from phonon-assisted hopping to weak localization as the thickness of the Si layer is reduced, and is dominated by quantum mechanical tunneling at low temperatures.

AB - Both the vertical and in-plane resistivities of Si/Nb multilayer films with different modulation wavelengths have been measured between 2 and 300 K, yielding an anisotropy ratio which can be over 105. While the in-plane transport in the normal state is metallic-like, the vertical conductance changes from phonon-assisted hopping to weak localization as the thickness of the Si layer is reduced, and is dominated by quantum mechanical tunneling at low temperatures.

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U2 - 10.1016/0038-1098(90)90218-Z

DO - 10.1016/0038-1098(90)90218-Z

M3 - Article

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VL - 75

SP - 651

EP - 655

JO - Solid State Communications

JF - Solid State Communications

IS - 8

ER -

Vertical electrical conductance in artificial Si/Nb multilayers

Abstract

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