Vertical electrical conductance in artificial Si/Nb multilayers

S. N. Song*, J. B. Ketterson

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Both the vertical and in-plane resistivities of Si/Nb multilayer films with different modulation wavelengths have been measured between 2 and 300 K, yielding an anisotropy ratio which can be over 105. While the in-plane transport in the normal state is metallic-like, the vertical conductance changes from phonon-assisted hopping to weak localization as the thickness of the Si layer is reduced, and is dominated by quantum mechanical tunneling at low temperatures.

Original languageEnglish (US)
Pages (from-to)651-655
Number of pages5
JournalSolid State Communications
Volume75
Issue number8
DOIs
StatePublished - Aug 1990

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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