Vertical quantum wire realized with double cleaved-edge overgrowth

S. F. Roth*, H. J. Krenner, D. Schuh, M. Bichler, M. Grayson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

A quantum wire is fabricated on (001) GaAs at the intersection of two overgrown cleaves. The wire is contacted at each end to n+-GaAs layers via two-dimensional (2D) leads. A side gate controls the density of the wire revealing conductance quantization. The step height is strongly reduced from 2e2/h due to the 2D lead series resistance. We characterize the 2D density and mobility for both cleave facets with four-point measurements. The density on the first facet is modulated by the substrate potential, depleting a 2 μm wide strip that defines the wire length. Microphotoluminescence shows an extra peak consistent with one-dimensional electron states at the corner.

Original languageEnglish (US)
Article number032102
JournalApplied Physics Letters
Volume89
Issue number3
DOIs
StatePublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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