Vertical resistive transition and critical currents in Si/Nb multilayers

S. N. Song; J. B. Ketterson

doi:10.1016/0038-1098(91)90835-J

Vertical resistive transition and critical currents in Si/Nb multilayers

S. N. Song^*, J. B. Ketterson

^*Corresponding author for this work

Physics and Astronomy

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3 Scopus citations

Abstract

The vertical and in-plane resistive transition have been studied in Si/Nb multilayers with and without initiating and terminating thick Nb electrodes. An anistropic percolation behavior of the vertical and in-plane resistive transition is observed. The behavior of the critical vertical-Josephson current is also discussed.

Original language	English (US)
Pages (from-to)	281-285
Number of pages	5
Journal	Solid State Communications
Volume	77
Issue number	4
DOIs	https://doi.org/10.1016/0038-1098(91)90835-J
State	Published - Jan 1991

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(91)90835-J

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title = "Vertical resistive transition and critical currents in Si/Nb multilayers",

abstract = "The vertical and in-plane resistive transition have been studied in Si/Nb multilayers with and without initiating and terminating thick Nb electrodes. An anistropic percolation behavior of the vertical and in-plane resistive transition is observed. The behavior of the critical vertical-Josephson current is also discussed.",

author = "Song, {S. N.} and Ketterson, {J. B.}",

note = "Funding Information: Acknowledgements - We are grateful to K E Gray and I K Schuller for valuable discussions The work was supported by the NSF Materials Research Center (under DMR-85-20280) and the NSF Science and Technology Center for Superconductwlty (under DMR-88-09854) Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

year = "1991",

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doi = "10.1016/0038-1098(91)90835-J",

language = "English (US)",

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T1 - Vertical resistive transition and critical currents in Si/Nb multilayers

AU - Song, S. N.

AU - Ketterson, J. B.

N1 - Funding Information: Acknowledgements - We are grateful to K E Gray and I K Schuller for valuable discussions The work was supported by the NSF Materials Research Center (under DMR-85-20280) and the NSF Science and Technology Center for Superconductwlty (under DMR-88-09854) Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

PY - 1991/1

Y1 - 1991/1

N2 - The vertical and in-plane resistive transition have been studied in Si/Nb multilayers with and without initiating and terminating thick Nb electrodes. An anistropic percolation behavior of the vertical and in-plane resistive transition is observed. The behavior of the critical vertical-Josephson current is also discussed.

AB - The vertical and in-plane resistive transition have been studied in Si/Nb multilayers with and without initiating and terminating thick Nb electrodes. An anistropic percolation behavior of the vertical and in-plane resistive transition is observed. The behavior of the critical vertical-Josephson current is also discussed.

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U2 - 10.1016/0038-1098(91)90835-J

DO - 10.1016/0038-1098(91)90835-J

M3 - Article

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SP - 281

EP - 285

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 4

ER -

Vertical resistive transition and critical currents in Si/Nb multilayers

Abstract

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