Abstract
The vertical and in-plane resistive transition have been studied in Si/Nb multilayers with and without initiating and terminating thick Nb electrodes. An anistropic percolation behavior of the vertical and in-plane resistive transition is observed. The behavior of the critical vertical-Josephson current is also discussed.
Original language | English (US) |
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Pages (from-to) | 281-285 |
Number of pages | 5 |
Journal | Solid State Communications |
Volume | 77 |
Issue number | 4 |
DOIs | |
State | Published - Jan 1991 |
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry