Vertical resistive transition and critical currents in Si/Nb multilayers

S. N. Song*, J. B. Ketterson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The vertical and in-plane resistive transition have been studied in Si/Nb multilayers with and without initiating and terminating thick Nb electrodes. An anistropic percolation behavior of the vertical and in-plane resistive transition is observed. The behavior of the critical vertical-Josephson current is also discussed.

Original languageEnglish (US)
Pages (from-to)281-285
Number of pages5
JournalSolid State Communications
Volume77
Issue number4
DOIs
StatePublished - Jan 1991

Funding

Acknowledgements - We are grateful to K E Gray and I K Schuller for valuable discussions The work was supported by the NSF Materials Research Center (under DMR-85-20280) and the NSF Science and Technology Center for Superconductwlty (under DMR-88-09854)

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry

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