Vertical resistive transition in Si Nb multilayers

S. N. Song; J. B. Ketterson

doi:10.1016/S0921-4526(90)81089-7

Vertical resistive transition in Si Nb multilayers

S. N. Song^*, J. B. Ketterson

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The vertical and in-plane resistive transition in a series of Si Nb multilayers has been studied. An anisotropic percolation model is adequate to explain the observed transition behavior. The measured temperature dependence of the supercurrent is compared with the Ambagaokar-Baratoff theory. The tail structure in I_c(T) curves near T_c is interpreted as the short coherence length effect.

Original language	English (US)
Pages (from-to)	479-480
Number of pages	2
Journal	Physica B: Physics of Condensed Matter
Volume	165-166
Issue number	PART 1
DOIs	https://doi.org/10.1016/S0921-4526(90)81089-7
State	Published - Aug 1990

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(90)81089-7

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title = "Vertical resistive transition in Si Nb multilayers",

abstract = "The vertical and in-plane resistive transition in a series of Si Nb multilayers has been studied. An anisotropic percolation model is adequate to explain the observed transition behavior. The measured temperature dependence of the supercurrent is compared with the Ambagaokar-Baratoff theory. The tail structure in Ic(T) curves near Tc is interpreted as the short coherence length effect.",

author = "Song, {S. N.} and Ketterson, {J. B.}",

note = "Funding Information: This work is supported by the NFS MRL program under grant DMR-8520280 and the NSF HTSC Science and Technology Center under grant DMR-89-117.",

year = "1990",

month = aug,

doi = "10.1016/S0921-4526(90)81089-7",

language = "English (US)",

volume = "165-166",

pages = "479--480",

journal = "Physica B: Physics of Condensed Matter",

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T1 - Vertical resistive transition in Si Nb multilayers

AU - Song, S. N.

AU - Ketterson, J. B.

N1 - Funding Information: This work is supported by the NFS MRL program under grant DMR-8520280 and the NSF HTSC Science and Technology Center under grant DMR-89-117.

PY - 1990/8

Y1 - 1990/8

N2 - The vertical and in-plane resistive transition in a series of Si Nb multilayers has been studied. An anisotropic percolation model is adequate to explain the observed transition behavior. The measured temperature dependence of the supercurrent is compared with the Ambagaokar-Baratoff theory. The tail structure in Ic(T) curves near Tc is interpreted as the short coherence length effect.

AB - The vertical and in-plane resistive transition in a series of Si Nb multilayers has been studied. An anisotropic percolation model is adequate to explain the observed transition behavior. The measured temperature dependence of the supercurrent is compared with the Ambagaokar-Baratoff theory. The tail structure in Ic(T) curves near Tc is interpreted as the short coherence length effect.

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U2 - 10.1016/S0921-4526(90)81089-7

DO - 10.1016/S0921-4526(90)81089-7

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AN - SCOPUS:0025465689

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SP - 479

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JO - Physica B: Physics of Condensed Matter

JF - Physica B: Physics of Condensed Matter

IS - PART 1

ER -

Vertical resistive transition in Si Nb multilayers

Abstract

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