Vertical resistive transition in Si Nb multilayers

S. N. Song*, J. B. Ketterson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


The vertical and in-plane resistive transition in a series of Si Nb multilayers has been studied. An anisotropic percolation model is adequate to explain the observed transition behavior. The measured temperature dependence of the supercurrent is compared with the Ambagaokar-Baratoff theory. The tail structure in Ic(T) curves near Tc is interpreted as the short coherence length effect.

Original languageEnglish (US)
Pages (from-to)479-480
Number of pages2
JournalPhysica B: Physics of Condensed Matter
Issue numberPART 1
StatePublished - Aug 1990

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Vertical resistive transition in Si Nb multilayers'. Together they form a unique fingerprint.

Cite this