The vertical and in-plane resistive transition in a series of Si Nb multilayers has been studied. An anisotropic percolation model is adequate to explain the observed transition behavior. The measured temperature dependence of the supercurrent is compared with the Ambagaokar-Baratoff theory. The tail structure in Ic(T) curves near Tc is interpreted as the short coherence length effect.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering