Abstract
LWIR and VLWIR type II InAs/GaSb superlattice photodetectors have for long time suffered from a high dark current level and a low dynamic resistance which hampers the its emergence to the infrared detection and imaging industry. However, with the use of M-structure superlattice, a new type II binary InAs/GaSb/AlSb superlattice design, as an effective blocking barrier, the dark current in type II superlattice diode has been significantly reduced. We have obtained comparable differential resistance product to the MCT technology at the cut-off wavelength of 10 and 14μm. Also, this new design is compatible with the optical optimization scheme, leading to high quantum efficiency, high special detectivity devices for photon detectors and focal plane arrays.
| Original language | English (US) |
|---|---|
| Title of host publication | Infrared Spaceborne Remote Sensing and Instrumentation XVI |
| Volume | 7082 |
| DOIs | |
| State | Published - Sep 29 2008 |
| Event | Infrared Spaceborne Remote Sensing and Instrumentation XVI - San Diego, CA, United States Duration: Aug 11 2008 → Aug 13 2008 |
Other
| Other | Infrared Spaceborne Remote Sensing and Instrumentation XVI |
|---|---|
| Country/Territory | United States |
| City | San Diego, CA |
| Period | 8/11/08 → 8/13/08 |
Keywords
- Focal plane array
- GaSb
- InAs
- LWIR
- M-structure
- Type-II superlattice
- VLWIR
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering