Very high performance LWIR and VLWIR Type-II InAs/GaSb superlattice photodiodes with M-structure barrier

Binh Minh Nguyen*, Darin Hoffman, Pierre Yves Delaunay, Edward Kwei Wei Huang, Manijeh Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Scopus citations

Abstract

LWIR and VLWIR type II InAs/GaSb superlattice photodetectors have for long time suffered from a high dark current level and a low dynamic resistance which hampers the its emergence to the infrared detection and imaging industry. However, with the use of M-structure superlattice, a new type II binary InAs/GaSb/AlSb superlattice design, as an effective blocking barrier, the dark current in type II superlattice diode has been significantly reduced. We have obtained comparable differential resistance product to the MCT technology at the cut-off wavelength of 10 and 14μm. Also, this new design is compatible with the optical optimization scheme, leading to high quantum efficiency, high special detectivity devices for photon detectors and focal plane arrays.

Original languageEnglish (US)
Title of host publicationInfrared Spaceborne Remote Sensing and Instrumentation XVI
Volume7082
DOIs
StatePublished - Sep 29 2008
EventInfrared Spaceborne Remote Sensing and Instrumentation XVI - San Diego, CA, United States
Duration: Aug 11 2008Aug 13 2008

Other

OtherInfrared Spaceborne Remote Sensing and Instrumentation XVI
CountryUnited States
CitySan Diego, CA
Period8/11/088/13/08

Keywords

  • Focal plane array
  • GaSb
  • InAs
  • LWIR
  • M-structure
  • Type-II superlattice
  • VLWIR

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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