Very high purity InP epilayer grown by metalorganic chemical vapor deposition

M. Razeghi; Ph Maurel; M. Defour; F. Omnes; G. Neu; A. Kozacki

doi:10.1063/1.99068

Very high purity InP epilayer grown by metalorganic chemical vapor deposition

M. Razeghi^*, Ph Maurel, M. Defour, F. Omnes, G. Neu, A. Kozacki

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

Very high purity InP epilayers have been grown by low-pressure metalorganic chemical vapor deposition growth technique using trimethylindium as In source. Residual doping levels as low as 3×10¹³ cm^-3, with Hall mobility as high as 6000 cm² V^-1 s^-1 at 300 K and 200 000 cm² V^-1 s^-1 at 50 K have been measured. These results and photoluminescence at 2 K showed that it is the purest InP epilayer ever reported in the literature, with zero compensation ratio.

Original language	English (US)
Pages (from-to)	117-119
Number of pages	3
Journal	Applied Physics Letters
Volume	52
Issue number	2
DOIs	https://doi.org/10.1063/1.99068
State	Published - 1988

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Very high purity InP epilayer grown by metalorganic chemical vapor deposition",

abstract = "Very high purity InP epilayers have been grown by low-pressure metalorganic chemical vapor deposition growth technique using trimethylindium as In source. Residual doping levels as low as 3×1013 cm-3, with Hall mobility as high as 6000 cm2 V-1 s-1 at 300 K and 200 000 cm2 V-1 s-1 at 50 K have been measured. These results and photoluminescence at 2 K showed that it is the purest InP epilayer ever reported in the literature, with zero compensation ratio.",

author = "M. Razeghi and Ph Maurel and M. Defour and F. Omnes and G. Neu and A. Kozacki",

year = "1988",

doi = "10.1063/1.99068",

language = "English (US)",

volume = "52",

pages = "117--119",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Very high purity InP epilayer grown by metalorganic chemical vapor deposition

AU - Razeghi, M.

AU - Maurel, Ph

AU - Defour, M.

AU - Omnes, F.

AU - Neu, G.

AU - Kozacki, A.

PY - 1988

Y1 - 1988

N2 - Very high purity InP epilayers have been grown by low-pressure metalorganic chemical vapor deposition growth technique using trimethylindium as In source. Residual doping levels as low as 3×1013 cm-3, with Hall mobility as high as 6000 cm2 V-1 s-1 at 300 K and 200 000 cm2 V-1 s-1 at 50 K have been measured. These results and photoluminescence at 2 K showed that it is the purest InP epilayer ever reported in the literature, with zero compensation ratio.

AB - Very high purity InP epilayers have been grown by low-pressure metalorganic chemical vapor deposition growth technique using trimethylindium as In source. Residual doping levels as low as 3×1013 cm-3, with Hall mobility as high as 6000 cm2 V-1 s-1 at 300 K and 200 000 cm2 V-1 s-1 at 50 K have been measured. These results and photoluminescence at 2 K showed that it is the purest InP epilayer ever reported in the literature, with zero compensation ratio.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Very high purity InP epilayer grown by metalorganic chemical vapor deposition

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