Very high purity InP epilayer grown by metalorganic chemical vapor deposition

M. Razeghi*, Ph Maurel, M. Defour, F. Omnes, G. Neu, A. Kozacki

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

43 Scopus citations

Abstract

Very high purity InP epilayers have been grown by low-pressure metalorganic chemical vapor deposition growth technique using trimethylindium as In source. Residual doping levels as low as 3×1013 cm-3, with Hall mobility as high as 6000 cm2 V-1 s-1 at 300 K and 200 000 cm2 V-1 s-1 at 50 K have been measured. These results and photoluminescence at 2 K showed that it is the purest InP epilayer ever reported in the literature, with zero compensation ratio.

Original languageEnglish (US)
Pages (from-to)117-119
Number of pages3
JournalApplied Physics Letters
Volume52
Issue number2
DOIs
StatePublished - Dec 1 1988

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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