Couches d'InP de tres haute purete obtenues par croissance en phase vapeur par la methode des organometalliques

Philippe Maurel; Martin Defour; Franck Omnes; Manijeh Razeghi

Couches d'InP de tres haute purete obtenues par croissance en phase vapeur par la methode des organometalliques

Translated title of the contribution: Very high purity InP layers grown by low pressure metallorganic chemical vapor deposition

Philippe Maurel^*, Martin Defour, Franck Omnes, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Very high purity InP epilayers have been grown by low pressure metal organic chemical vapor deposition using trimethylindium as indium source. Residual doping levels as low as 3.10¹³ cm^-3, with Hall mobility higher than 150,000 cm²/V.s at low temperatures, have been measured. It is claimed that photoluminescence at 2 K showed that these are the purest InP epilayers that have been reported in the literature.

Translated title of the contribution	Very high purity InP layers grown by low pressure metallorganic chemical vapor deposition
Original language	French
Pages (from-to)	191-211
Number of pages	21
Journal	Revue technique - Thomson-CSF
Volume	20-21
Issue number	2
State	Published - Jun 1 1989

ASJC Scopus subject areas

General Engineering

Cite this

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abstract = "Very high purity InP epilayers have been grown by low pressure metal organic chemical vapor deposition using trimethylindium as indium source. Residual doping levels as low as 3.1013 cm-3, with Hall mobility higher than 150,000 cm2/V.s at low temperatures, have been measured. It is claimed that photoluminescence at 2 K showed that these are the purest InP epilayers that have been reported in the literature.",

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AU - Maurel, Philippe

AU - Defour, Martin

AU - Omnes, Franck

AU - Razeghi, Manijeh

PY - 1989/6/1

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N2 - Very high purity InP epilayers have been grown by low pressure metal organic chemical vapor deposition using trimethylindium as indium source. Residual doping levels as low as 3.1013 cm-3, with Hall mobility higher than 150,000 cm2/V.s at low temperatures, have been measured. It is claimed that photoluminescence at 2 K showed that these are the purest InP epilayers that have been reported in the literature.

AB - Very high purity InP epilayers have been grown by low pressure metal organic chemical vapor deposition using trimethylindium as indium source. Residual doping levels as low as 3.1013 cm-3, with Hall mobility higher than 150,000 cm2/V.s at low temperatures, have been measured. It is claimed that photoluminescence at 2 K showed that these are the purest InP epilayers that have been reported in the literature.

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ER -

Couches d'InP de tres haute purete obtenues par croissance en phase vapeur par la methode des organometalliques

Abstract

ASJC Scopus subject areas

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