Very high purity InP epilayers have been grown by low pressure metal organic chemical vapor deposition using trimethylindium as indium source. Residual doping levels as low as 3.1013 cm-3, with Hall mobility higher than 150,000 cm2/V.s at low temperatures, have been measured. It is claimed that photoluminescence at 2 K showed that these are the purest InP epilayers that have been reported in the literature.
|Translated title of the contribution||Very high purity InP layers grown by low pressure metallorganic chemical vapor deposition|
|Number of pages||21|
|Journal||Revue technique - Thomson-CSF|
|State||Published - Jun 1 1989|
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