Very high quality p-type AlxGa1-xN/GaN superlattice

A. Yasan, Manijeh Razeghi*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Very high quality p-type AlGaN/GaN superlattices have been achieved through optimization of Mg flow and period of superlattice. A theoretical model was used to predict the performance of superlattice with different Al compositions and various periods. The model has based on polarization charge induced by spontaneous polarization and piezoelectric effect (due to lattice mismatch and thermal strain) which leads to enhancement in acceptor ionization and therefore carrier concentration. Piezoelectric coefficients for GaN system are about one order of magnitude larger than other group III-V semiconductors leading to a huge electric field.

Original languageEnglish (US)
Title of host publication2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages389-390
Number of pages2
ISBN (Electronic)0780374320, 9780780374324
DOIs
StatePublished - Jan 1 2001
EventInternational Semiconductor Device Research Symposium, ISDRS 2001 - Washington, United States
Duration: Dec 5 2001Dec 7 2001

Publication series

Name2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings

Other

OtherInternational Semiconductor Device Research Symposium, ISDRS 2001
CountryUnited States
CityWashington
Period12/5/0112/7/01

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Very high quality p-type Al<sub>x</sub>Ga<sub>1-x</sub>N/GaN superlattice'. Together they form a unique fingerprint.

Cite this