The authors report the dependence of the quantum efficiency on device thickness of type-II InAsGaSb superlattice photodetectors with a cutoff wavelength around 12 μm. The quantum efficiency and responsivity show a clear delineation in comparison to the device thickness. An external single-pass quantum efficiency of 54% is obtained for a 12 μm cutoff wavelength photodiodes with a π -region thickness of 6.0 μm. The R0 A value is kept stable for the range of structure thicknesses allowing for a specific detectivity (2.2× 1011 cm HzW).
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)