Very high quantum efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12 μm

Binh Minh Nguyen*, Darin Hoffman, Yajun Wei, Pierre Yves Delaunay, Andrew Hood, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

121 Scopus citations

Abstract

The authors report the dependence of the quantum efficiency on device thickness of type-II InAsGaSb superlattice photodetectors with a cutoff wavelength around 12 μm. The quantum efficiency and responsivity show a clear delineation in comparison to the device thickness. An external single-pass quantum efficiency of 54% is obtained for a 12 μm cutoff wavelength photodiodes with a π -region thickness of 6.0 μm. The R0 A value is kept stable for the range of structure thicknesses allowing for a specific detectivity (2.2× 1011 cm HzW).

Original languageEnglish (US)
Article number231108
JournalApplied Physics Letters
Volume90
Issue number23
DOIs
StatePublished - Jun 27 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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