Very high quantum efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12 μm

Binh Minh Nguyen; Darin Hoffman; Yajun Wei; Pierre Yves Delaunay; Andrew Hood; Manijeh Razeghi

doi:10.1063/1.2746943

Very high quantum efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12 μm

Binh Minh Nguyen^*, Darin Hoffman, Yajun Wei, Pierre Yves Delaunay, Andrew Hood, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

140 Scopus citations

Abstract

The authors report the dependence of the quantum efficiency on device thickness of type-II InAsGaSb superlattice photodetectors with a cutoff wavelength around 12 μm. The quantum efficiency and responsivity show a clear delineation in comparison to the device thickness. An external single-pass quantum efficiency of 54% is obtained for a 12 μm cutoff wavelength photodiodes with a π -region thickness of 6.0 μm. The R0 A value is kept stable for the range of structure thicknesses allowing for a specific detectivity (2.2× 1011 cm HzW).

Original language	English (US)
Article number	231108
Journal	Applied Physics Letters
Volume	90
Issue number	23
DOIs	https://doi.org/10.1063/1.2746943
State	Published - 2007

Funding

This work was supported partially by AFOSR. The authors would like to acknowledge Donald Silversmith from AFOSR, Vaidya Nathan from AFRL/VSSS, Joe Pellegrino from ARL, and Meimei Tidrow from MDA for their support, interest, and encouragement.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2746943

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title = "Very high quantum efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12 μm",

abstract = "The authors report the dependence of the quantum efficiency on device thickness of type-II InAsGaSb superlattice photodetectors with a cutoff wavelength around 12 μm. The quantum efficiency and responsivity show a clear delineation in comparison to the device thickness. An external single-pass quantum efficiency of 54% is obtained for a 12 μm cutoff wavelength photodiodes with a π -region thickness of 6.0 μm. The R0 A value is kept stable for the range of structure thicknesses allowing for a specific detectivity (2.2× 1011 cm HzW).",

author = "Nguyen, {Binh Minh} and Darin Hoffman and Yajun Wei and Delaunay, {Pierre Yves} and Andrew Hood and Manijeh Razeghi",

note = "Funding Information: This work was supported partially by AFOSR. The authors would like to acknowledge Donald Silversmith from AFOSR, Vaidya Nathan from AFRL/VSSS, Joe Pellegrino from ARL, and Meimei Tidrow from MDA for their support, interest, and encouragement. ",

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doi = "10.1063/1.2746943",

language = "English (US)",

volume = "90",

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AU - Nguyen, Binh Minh

AU - Hoffman, Darin

AU - Wei, Yajun

AU - Delaunay, Pierre Yves

AU - Hood, Andrew

AU - Razeghi, Manijeh

N1 - Funding Information: This work was supported partially by AFOSR. The authors would like to acknowledge Donald Silversmith from AFOSR, Vaidya Nathan from AFRL/VSSS, Joe Pellegrino from ARL, and Meimei Tidrow from MDA for their support, interest, and encouragement.

PY - 2007

Y1 - 2007

N2 - The authors report the dependence of the quantum efficiency on device thickness of type-II InAsGaSb superlattice photodetectors with a cutoff wavelength around 12 μm. The quantum efficiency and responsivity show a clear delineation in comparison to the device thickness. An external single-pass quantum efficiency of 54% is obtained for a 12 μm cutoff wavelength photodiodes with a π -region thickness of 6.0 μm. The R0 A value is kept stable for the range of structure thicknesses allowing for a specific detectivity (2.2× 1011 cm HzW).

AB - The authors report the dependence of the quantum efficiency on device thickness of type-II InAsGaSb superlattice photodetectors with a cutoff wavelength around 12 μm. The quantum efficiency and responsivity show a clear delineation in comparison to the device thickness. An external single-pass quantum efficiency of 54% is obtained for a 12 μm cutoff wavelength photodiodes with a π -region thickness of 6.0 μm. The R0 A value is kept stable for the range of structure thicknesses allowing for a specific detectivity (2.2× 1011 cm HzW).

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Very high quantum efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12 μm

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