Very high transconductance InGaAs/InP junction field-effect transistor with submicrometer gate

J. Y. Raulin*, E. Thorngren, M. A. Di Forte-Poisson, M. Razeghi, G. Colomer

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

A very high transconductance (260 mS/mm) has been achieved for the first time with an InGaAs/InP junction field-effect transistor. The transistor was fabricated using a chemical etching technique which allowed the fabrication of submicrometer gate (0.5 μm). Very low values of access resistance were obtained using a self-aligned technology.

Original languageEnglish (US)
Pages (from-to)535-536
Number of pages2
JournalApplied Physics Letters
Volume50
Issue number9
DOIs
StatePublished - 1987

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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