Very high transconductance InGaAs/InP junction field-effect transistor with submicrometer gate

J. Y. Raulin; E. Thorngren; M. A. Di Forte-Poisson; M. Razeghi; G. Colomer

doi:10.1063/1.98151

Very high transconductance InGaAs/InP junction field-effect transistor with submicrometer gate

J. Y. Raulin^*, E. Thorngren, M. A. Di Forte-Poisson, M. Razeghi, G. Colomer

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

A very high transconductance (260 mS/mm) has been achieved for the first time with an InGaAs/InP junction field-effect transistor. The transistor was fabricated using a chemical etching technique which allowed the fabrication of submicrometer gate (0.5 μm). Very low values of access resistance were obtained using a self-aligned technology.

Original language	English (US)
Pages (from-to)	535-536
Number of pages	2
Journal	Applied Physics Letters
Volume	50
Issue number	9
DOIs	https://doi.org/10.1063/1.98151
State	Published - 1987

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.98151

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title = "Very high transconductance InGaAs/InP junction field-effect transistor with submicrometer gate",

abstract = "A very high transconductance (260 mS/mm) has been achieved for the first time with an InGaAs/InP junction field-effect transistor. The transistor was fabricated using a chemical etching technique which allowed the fabrication of submicrometer gate (0.5 μm). Very low values of access resistance were obtained using a self-aligned technology.",

author = "Raulin, {J. Y.} and E. Thorngren and {Di Forte-Poisson}, {M. A.} and M. Razeghi and G. Colomer",

year = "1987",

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pages = "535--536",

journal = "Applied Physics Letters",

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T1 - Very high transconductance InGaAs/InP junction field-effect transistor with submicrometer gate

AU - Raulin, J. Y.

AU - Thorngren, E.

AU - Di Forte-Poisson, M. A.

AU - Razeghi, M.

AU - Colomer, G.

PY - 1987

Y1 - 1987

N2 - A very high transconductance (260 mS/mm) has been achieved for the first time with an InGaAs/InP junction field-effect transistor. The transistor was fabricated using a chemical etching technique which allowed the fabrication of submicrometer gate (0.5 μm). Very low values of access resistance were obtained using a self-aligned technology.

AB - A very high transconductance (260 mS/mm) has been achieved for the first time with an InGaAs/InP junction field-effect transistor. The transistor was fabricated using a chemical etching technique which allowed the fabrication of submicrometer gate (0.5 μm). Very low values of access resistance were obtained using a self-aligned technology.

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U2 - 10.1063/1.98151

DO - 10.1063/1.98151

M3 - Article

AN - SCOPUS:36549099888

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VL - 50

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EP - 536

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Very high transconductance InGaAs/InP junction field-effect transistor with submicrometer gate

Abstract

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