Very high transconductance InGaAs/InP junction field-effect transistor with submicrometer gate

J. Y. Raulin*, E. Thorngren, M. A. Di Forte-Poisson, M. Razeghi, G. Colomer

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Fingerprint

Dive into the research topics of 'Very high transconductance InGaAs/InP junction field-effect transistor with submicrometer gate'. Together they form a unique fingerprint.

Keyphrases

Material Science

Engineering