Very long wavelength GaAs/GaInP quantum well infrared photodetectors

Christopher Jelen*, Steven Boyd Slivken, Gail J. Brown, Manijeh Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We demonstrate long wavelength quantum well infrared photodetectors with GaAs quantum wells and GaInP barriers grown using gas-source molecular beam epitaxy. Wafers were grown with varying well widths. The optimum well width was 75 angstrom, which resulted in a detection peak at 13 μm and a cutoff wavelength of 15 μm. Dark current measurements of the samples with 15 μm cutoff wavelength show low dark current densities. The dark current characteristics have been investigated as a function of temperature and electron density in the well and compared to a model which takes into account thermionic emission and thermally assisted tunneling. The model is used to extract a saturation velocity of 1.5 × 105 cm/s for electrons. The photoelectron lifetime before recapture has been deduced from this carrier velocity and photoconductive gain measurements. The lifetime is found to be approximately 5 ps. Preliminary focal plane array imaging is demonstrated.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsGail J. Brown, Manijeh Razeghi
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages144-152
Number of pages9
ISBN (Print)0819424102
StatePublished - Dec 1 1997
EventPhotodetectors: Materials and Devices II - San Jose, CA, USA
Duration: Feb 12 1997Feb 14 1997

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2999
ISSN (Print)0277-786X

Other

OtherPhotodetectors: Materials and Devices II
CitySan Jose, CA, USA
Period2/12/972/14/97

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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