@inproceedings{3c574f4a30e74e52a58c7fd768cd3238,
title = "Very long wavelength GaAs/GaInP quantum well infrared photodetectors",
abstract = "We demonstrate long wavelength quantum well infrared photodetectors with GaAs quantum wells and GaInP barriers grown using gas-source molecular beam epitaxy. Wafers were grown with varying well widths. The optimum well width was 75 angstrom, which resulted in a detection peak at 13 μm and a cutoff wavelength of 15 μm. Dark current measurements of the samples with 15 μm cutoff wavelength show low dark current densities. The dark current characteristics have been investigated as a function of temperature and electron density in the well and compared to a model which takes into account thermionic emission and thermally assisted tunneling. The model is used to extract a saturation velocity of 1.5 × 105 cm/s for electrons. The photoelectron lifetime before recapture has been deduced from this carrier velocity and photoconductive gain measurements. The lifetime is found to be approximately 5 ps. Preliminary focal plane array imaging is demonstrated.",
author = "Christopher Jelen and Slivken, {Steven Boyd} and Brown, {Gail J.} and Manijeh Razeghi",
year = "1997",
month = dec,
day = "1",
language = "English (US)",
isbn = "0819424102",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Society of Photo-Optical Instrumentation Engineers",
pages = "144--152",
editor = "Brown, {Gail J.} and Manijeh Razeghi",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
note = "Photodetectors: Materials and Devices II ; Conference date: 12-02-1997 Through 14-02-1997",
}