Very long wavelength infrared type-II detectors operating at 80 K

H. Mohseni*, A. Tahraoui, J. Wojkowski, M. Razeghi, G. J. Brown, W. C. Mitchel, Y. S. Park

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

68 Scopus citations

Abstract

We report a demonstration of very long wavelength infrared detectors based on InAs/GaSb superlattices operating at T=80 K. Detector structures with excellent material quality were grown on an optimized GaSb buffer layer on GaAs semi-insulating substrates. Photoconductive devices with 50% cutoff wavelength of λc= 17 μm showed a peak responsivity of about 100 mA/W at T=80 K. Devices with 50% cutoff wavelengths up to λc=22 μm were demonstrated at this temperature. Good uniformity was obtained over large areas even for the devices with very long cutoff wavelengths.

Original languageEnglish (US)
Pages (from-to)1572-1574
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number11
DOIs
StatePublished - Sep 11 2000

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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