Very long wavelength infrared type-II detectors operating at 80 K

H. Mohseni; A. Tahraoui; J. Wojkowski; M. Razeghi; G. J. Brown; W. C. Mitchel; Y. S. Park

doi:10.1063/1.1308528

Very long wavelength infrared type-II detectors operating at 80 K

H. Mohseni^*, A. Tahraoui, J. Wojkowski, M. Razeghi, G. J. Brown, W. C. Mitchel, Y. S. Park

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

67 Scopus citations

Abstract

We report a demonstration of very long wavelength infrared detectors based on InAs/GaSb superlattices operating at T=80 K. Detector structures with excellent material quality were grown on an optimized GaSb buffer layer on GaAs semi-insulating substrates. Photoconductive devices with 50% cutoff wavelength of λ_c= 17 μm showed a peak responsivity of about 100 mA/W at T=80 K. Devices with 50% cutoff wavelengths up to λ_c=22 μm were demonstrated at this temperature. Good uniformity was obtained over large areas even for the devices with very long cutoff wavelengths.

Original language	English (US)
Pages (from-to)	1572-1574
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	11
DOIs	https://doi.org/10.1063/1.1308528
State	Published - Sep 11 2000

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Very long wavelength infrared type-II detectors operating at 80 K",

abstract = "We report a demonstration of very long wavelength infrared detectors based on InAs/GaSb superlattices operating at T=80 K. Detector structures with excellent material quality were grown on an optimized GaSb buffer layer on GaAs semi-insulating substrates. Photoconductive devices with 50% cutoff wavelength of λc= 17 μm showed a peak responsivity of about 100 mA/W at T=80 K. Devices with 50% cutoff wavelengths up to λc=22 μm were demonstrated at this temperature. Good uniformity was obtained over large areas even for the devices with very long cutoff wavelengths.",

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T1 - Very long wavelength infrared type-II detectors operating at 80 K

AU - Mohseni, H.

AU - Tahraoui, A.

AU - Wojkowski, J.

AU - Razeghi, M.

AU - Brown, G. J.

AU - Mitchel, W. C.

AU - Park, Y. S.

PY - 2000/9/11

Y1 - 2000/9/11

N2 - We report a demonstration of very long wavelength infrared detectors based on InAs/GaSb superlattices operating at T=80 K. Detector structures with excellent material quality were grown on an optimized GaSb buffer layer on GaAs semi-insulating substrates. Photoconductive devices with 50% cutoff wavelength of λc= 17 μm showed a peak responsivity of about 100 mA/W at T=80 K. Devices with 50% cutoff wavelengths up to λc=22 μm were demonstrated at this temperature. Good uniformity was obtained over large areas even for the devices with very long cutoff wavelengths.

AB - We report a demonstration of very long wavelength infrared detectors based on InAs/GaSb superlattices operating at T=80 K. Detector structures with excellent material quality were grown on an optimized GaSb buffer layer on GaAs semi-insulating substrates. Photoconductive devices with 50% cutoff wavelength of λc= 17 μm showed a peak responsivity of about 100 mA/W at T=80 K. Devices with 50% cutoff wavelengths up to λc=22 μm were demonstrated at this temperature. Good uniformity was obtained over large areas even for the devices with very long cutoff wavelengths.

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