Very low threshold buried ridge structure lasers emitting at 1.3 μm grown by low pressure metalorganic chemical vapor deposition

M. Razeghi*, R. Blondeau, K. Kazmierski, M. Krakowski, J. P. Duchemin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

GaInAsP-InP buried ridge structure lasers emitting at 1.3 μm have been fabricated on material grown completely by low pressure metalorganic chemical vapor deposition. These lasers have low threshold (11 mA), exhibit linear (kink-free) light-current characteristics up to high powers (10 mW/facets), and can be operated at high temperatures (70°C). Excellent uniformity over 10 cm2 has been obtained, and an external quantum efficiency of 60% for two faces has been measured.

Original languageEnglish (US)
Pages (from-to)131-133
Number of pages3
JournalApplied Physics Letters
Volume46
Issue number2
DOIs
StatePublished - Dec 1 1985

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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