Room-temperature GaInAsP/InP DH lasers emitting at 1.3 μm and having very low threshold current densities have been grown by LP MOCVD. Thresholds were lower than the best values reported for comparable devices grown by LPE, the lowest threshold being 430 A/cm2 for a cavity length of 950 μm (width 150 μm) with an active-layer thickness of d = 2200 Å.
- Semiconductor devices and materials
- Semiconductor lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering