Very low threshold GaInAsP/InP double-heterostructure lasers grown by LP MOCVD

M. Razeghi, S. Hersee, P. Hirtz, R. Blondeau, B. de Cremoux, J. P. Duchemin

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

Room-temperature GaInAsP/InP DH lasers emitting at 1.3 μm and having very low threshold current densities have been grown by LP MOCVD. Thresholds were lower than the best values reported for comparable devices grown by LPE, the lowest threshold being 430 A/cm2 for a cavity length of 950 μm (width 150 μm) with an active-layer thickness of d = 2200 Å.

Original languageEnglish (US)
Pages (from-to)336-337
Number of pages2
JournalElectronics Letters
Volume19
Issue number9
DOIs
StatePublished - Apr 28 1983

Keywords

  • Semiconductor devices and materials
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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