Visible blind GaN p-i-n photodiodes

D. Walker*, A. Saxler, P. Kung, X. Zhang, M. Hamilton, J. Diaz, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

122 Scopus citations

Abstract

We present the growth and characterization of GaN p-i-n photodiodes with a very high degree of visible blindness. The thin films were grown by low-pressure metalorganic chemical vapor deposition. The room-temperature spectral response shows a high responsivity of 0.15 A/W up until 365 nm, above which the response decreases by six orders of magnitude. Current/voltage measurements supply us with a zero bias resistance of 1011. Lastly, the temporal response shows a rise and fall time of 2.5 μs measured at zero bias. This response time is limited by the measurement circuit.

Original languageEnglish (US)
Pages (from-to)3303-3305
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number25
DOIs
StatePublished - Dec 1 1998

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Visible blind GaN p-i-n photodiodes'. Together they form a unique fingerprint.

Cite this