Abstract
We present the growth and characterization of GaN p-i-n photodiodes with a very high degree of visible blindness. The thin films were grown by low-pressure metalorganic chemical vapor deposition. The room-temperature spectral response shows a high responsivity of 0.15 A/W up until 365 nm, above which the response decreases by six orders of magnitude. Current/voltage measurements supply us with a zero bias resistance of 1011. Lastly, the temporal response shows a rise and fall time of 2.5 μs measured at zero bias. This response time is limited by the measurement circuit.
Original language | English (US) |
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Pages (from-to) | 3303-3305 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 72 |
Issue number | 25 |
DOIs | |
State | Published - 1998 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)