INIS
deposition
100%
layers
100%
growth
50%
films
37%
x-ray diffraction
37%
precursor
37%
metals
25%
tungsten oxides
25%
chemistry
12%
nmr
12%
single crystals
12%
x radiation
12%
foundations
12%
crystals
12%
synthesis
12%
catalysts
12%
ultraviolet radiation
12%
yields
12%
hydrogen 1
12%
reactivity
12%
nanowires
12%
volatility
12%
thickness
12%
carbon 13
12%
x-ray photoelectron spectroscopy
12%
atomic force microscopy
12%
quartz
12%
microbalances
12%
ellipsometry
12%
annealing
12%
fourier transformation
12%
molybdenum complexes
12%
grazing
12%
molybdenum
12%
photoelectron spectroscopy
12%
thermogravimetric analysis
12%
reflectivity
12%
diffraction (x-ray)
12%
tungsten complexes
12%
Chemistry
Atomic Layer Epitaxy
100%
Liquid Film
25%
Molybdenum
25%
Thermogravimetric Analysis
25%
Metal
25%
Quartz
25%
Amorphous Material
25%
Procedure
25%
X-Ray Diffraction
25%
X-Ray Photoelectron Spectroscopy
25%
Ultra-Violet Photoelectron Spectroscopy
12%
Reflectivity
12%
Annealing
12%
Atomic Force Microscopy
12%
13C NMR Spectroscopy
12%
1H NMR Spectroscopy
12%
Nanowire
12%
Elemental Analysis
12%
UV/VIS Spectroscopy
12%
Fourier Transform Infrared Spectroscopy
12%
Tungsten
12%
Ellipsometry
12%
Single Crystal X-Ray Diffraction
12%
Reaction Yield
12%
Heterogeneous Catalyst
12%
Phase Composition
12%
Crystalline Material
12%
Chemistry
12%
Group
12%
X-Ray
12%
Synthesis (Chemical)
12%
Reactivity
12%
Thickness
12%
Biochemistry, Genetics and Molecular Biology
Growth
50%
Precursor
37%
X Ray Diffraction
25%
Optics
12%
X Ray
12%
Infrared Radiation
12%
Synthesis
12%
Microscopy
12%
Single Crystal X-Ray Diffraction
12%
Fourier Transform
12%
Crystal
12%
Electrical Parameters
12%
Incidence
12%
Catalyst
12%
Thickness
12%
Atomic Force Microscopy
12%
Ultra Violet Photoemission Spectroscopy
12%