Voltage-induced ferromagnetic resonance in magnetic tunnel junctions

Jian Zhu*, J. A. Katine, Graham E. Rowlands, Yu Jin Chen, Zheng Duan, Juan G. Alzate, Pramey Upadhyaya, Juergen Langer, Pedram Khalili Amiri, Kang L. Wang, Ilya N. Krivorotov

*Corresponding author for this work

Research output: Contribution to journalArticle

189 Scopus citations


We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that GHz-frequency VCMA torque and ST in low-resistance MTJs have similar magnitudes, and thus that both torques are equally important for understanding high-frequency voltage-driven magnetization dynamics in MTJs. As an example, we show that VCMA can increase the sensitivity of an MTJ-based microwave signal detector to the sensitivity level of semiconductor Schottky diodes.

Original languageEnglish (US)
Article number197203
JournalPhysical review letters
Issue number19
StatePublished - May 9 2012

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Zhu, J., Katine, J. A., Rowlands, G. E., Chen, Y. J., Duan, Z., Alzate, J. G., Upadhyaya, P., Langer, J., Amiri, P. K., Wang, K. L., & Krivorotov, I. N. (2012). Voltage-induced ferromagnetic resonance in magnetic tunnel junctions. Physical review letters, 108(19), [197203]. https://doi.org/10.1103/PhysRevLett.108.197203