Voltage-induced switching of nanoscale magnetic tunnel junctions

J. G. Alzate*, P. Khalili Amiri, P. Upadhyaya, S. S. Cherepov, J. Zhu, M. Lewis, R. Dorrance, J. A. Katine, J. Langer, K. Galatsis, D. Markovic, I. Krivorotov, K. L. Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

40 Scopus citations

Abstract

We demonstrate voltage-induced (non-STT) switching of nanoscale, high resistance voltage-controlled magnetic tunnel junctions (VMTJs) with pulses down to 10 ns. We show ∼10x reduction in switching energies (compared to STT) with leakage currents < 105 A/cm2. Switching dynamics, from quasi-static to the nanosecond regime, are studied in detail. Finally, a strategy for eliminating the need for external magnetic-fields, where switching is performed by set/reset voltages of different amplitudes but same polarity, is proposed and verified experimentally.

Original languageEnglish (US)
Title of host publication2012 IEEE International Electron Devices Meeting, IEDM 2012
Pages29.5.1-29.5.4
DOIs
StatePublished - 2012
Event2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States
Duration: Dec 10 2012Dec 13 2012

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2012 IEEE International Electron Devices Meeting, IEDM 2012
CountryUnited States
CitySan Francisco, CA
Period12/10/1212/13/12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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