Voltage-induced switching of nanoscale magnetic tunnel junctions

J. G. Alzate; P. Khalili Amiri; P. Upadhyaya; S. S. Cherepov; J. Zhu; M. Lewis; R. Dorrance; J. A. Katine; J. Langer; K. Galatsis; D. Markovic; I. Krivorotov; K. L. Wang

doi:10.1109/IEDM.2012.6479130

Voltage-induced switching of nanoscale magnetic tunnel junctions

J. G. Alzate^*, P. Khalili Amiri, P. Upadhyaya, S. S. Cherepov, J. Zhu, M. Lewis, R. Dorrance, J. A. Katine, J. Langer, K. Galatsis, D. Markovic, I. Krivorotov, K. L. Wang

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

59 Scopus citations

Abstract

We demonstrate voltage-induced (non-STT) switching of nanoscale, high resistance voltage-controlled magnetic tunnel junctions (VMTJs) with pulses down to 10 ns. We show ∼10x reduction in switching energies (compared to STT) with leakage currents < 10⁵ A/cm². Switching dynamics, from quasi-static to the nanosecond regime, are studied in detail. Finally, a strategy for eliminating the need for external magnetic-fields, where switching is performed by set/reset voltages of different amplitudes but same polarity, is proposed and verified experimentally.

Original language	English (US)
Title of host publication	2012 IEEE International Electron Devices Meeting, IEDM 2012
Pages	29.5.1-29.5.4
DOIs	https://doi.org/10.1109/IEDM.2012.6479130
State	Published - 2012
Event	2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States Duration: Dec 10 2012 → Dec 13 2012

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2012 IEEE International Electron Devices Meeting, IEDM 2012
Country/Territory	United States
City	San Francisco, CA
Period	12/10/12 → 12/13/12

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1109/IEDM.2012.6479130

Cite this

Alzate, J. G., Amiri, P. K., Upadhyaya, P., Cherepov, S. S., Zhu, J., Lewis, M., Dorrance, R., Katine, J. A., Langer, J., Galatsis, K., Markovic, D., Krivorotov, I., & Wang, K. L. (2012). Voltage-induced switching of nanoscale magnetic tunnel junctions. In 2012 IEEE International Electron Devices Meeting, IEDM 2012 (pp. 29.5.1-29.5.4). Article 6479130 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2012.6479130

@inproceedings{50280b958aed45c4af7dc9f841e0c8d0,

title = "Voltage-induced switching of nanoscale magnetic tunnel junctions",

abstract = "We demonstrate voltage-induced (non-STT) switching of nanoscale, high resistance voltage-controlled magnetic tunnel junctions (VMTJs) with pulses down to 10 ns. We show ∼10x reduction in switching energies (compared to STT) with leakage currents < 105 A/cm2. Switching dynamics, from quasi-static to the nanosecond regime, are studied in detail. Finally, a strategy for eliminating the need for external magnetic-fields, where switching is performed by set/reset voltages of different amplitudes but same polarity, is proposed and verified experimentally.",

author = "Alzate, {J. G.} and Amiri, {P. Khalili} and P. Upadhyaya and Cherepov, {S. S.} and J. Zhu and M. Lewis and R. Dorrance and Katine, {J. A.} and J. Langer and K. Galatsis and D. Markovic and I. Krivorotov and Wang, {K. L.}",

year = "2012",

doi = "10.1109/IEDM.2012.6479130",

language = "English (US)",

isbn = "9781467348706",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "29.5.1--29.5.4",

booktitle = "2012 IEEE International Electron Devices Meeting, IEDM 2012",

note = "2012 IEEE International Electron Devices Meeting, IEDM 2012 ; Conference date: 10-12-2012 Through 13-12-2012",

}

Alzate, JG, Amiri, PK, Upadhyaya, P, Cherepov, SS, Zhu, J, Lewis, M, Dorrance, R, Katine, JA, Langer, J, Galatsis, K, Markovic, D, Krivorotov, I & Wang, KL 2012, Voltage-induced switching of nanoscale magnetic tunnel junctions. in 2012 IEEE International Electron Devices Meeting, IEDM 2012., 6479130, Technical Digest - International Electron Devices Meeting, IEDM, pp. 29.5.1-29.5.4, 2012 IEEE International Electron Devices Meeting, IEDM 2012, San Francisco, CA, United States, 12/10/12. https://doi.org/10.1109/IEDM.2012.6479130

Voltage-induced switching of nanoscale magnetic tunnel junctions. / Alzate, J. G.; Amiri, P. Khalili; Upadhyaya, P. et al.
2012 IEEE International Electron Devices Meeting, IEDM 2012. 2012. p. 29.5.1-29.5.4 6479130 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Voltage-induced switching of nanoscale magnetic tunnel junctions

AU - Alzate, J. G.

AU - Amiri, P. Khalili

AU - Upadhyaya, P.

AU - Cherepov, S. S.

AU - Zhu, J.

AU - Lewis, M.

AU - Dorrance, R.

AU - Katine, J. A.

AU - Langer, J.

AU - Galatsis, K.

AU - Markovic, D.

AU - Krivorotov, I.

AU - Wang, K. L.

PY - 2012

Y1 - 2012

N2 - We demonstrate voltage-induced (non-STT) switching of nanoscale, high resistance voltage-controlled magnetic tunnel junctions (VMTJs) with pulses down to 10 ns. We show ∼10x reduction in switching energies (compared to STT) with leakage currents < 105 A/cm2. Switching dynamics, from quasi-static to the nanosecond regime, are studied in detail. Finally, a strategy for eliminating the need for external magnetic-fields, where switching is performed by set/reset voltages of different amplitudes but same polarity, is proposed and verified experimentally.

AB - We demonstrate voltage-induced (non-STT) switching of nanoscale, high resistance voltage-controlled magnetic tunnel junctions (VMTJs) with pulses down to 10 ns. We show ∼10x reduction in switching energies (compared to STT) with leakage currents < 105 A/cm2. Switching dynamics, from quasi-static to the nanosecond regime, are studied in detail. Finally, a strategy for eliminating the need for external magnetic-fields, where switching is performed by set/reset voltages of different amplitudes but same polarity, is proposed and verified experimentally.

UR - http://www.scopus.com/inward/record.url?scp=84876099866&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84876099866&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2012.6479130

DO - 10.1109/IEDM.2012.6479130

M3 - Conference contribution

AN - SCOPUS:84876099866

SN - 9781467348706

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 29.5.1-29.5.4

BT - 2012 IEEE International Electron Devices Meeting, IEDM 2012

T2 - 2012 IEEE International Electron Devices Meeting, IEDM 2012

Y2 - 10 December 2012 through 13 December 2012

ER -

Voltage-induced switching of nanoscale magnetic tunnel junctions

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