Wafer bonding technique for fabricating 1.5-um InGaAs/InGaAsP pillar-free microdisk lasers

Sheng Li Wu; Lijun Wang; Jianping Zhang; Liwei Wang; Seng Tiong Ho

Wafer bonding technique for fabricating 1.5-um InGaAs/InGaAsP pillar-free microdisk lasers

Sheng Li Wu^*, Lijun Wang, Jianping Zhang, Liwei Wang, Seng Tiong Ho

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A new wafer bonding-etching technique has been developed successfully for micro-disk laser fabrication. Pillar-free micro-disk lasers have been realized. The micro-disk is placed on low refractive index material such as SiO ₂ and surrounded by SiO ₂ and air. The pillar-free micro-disk laser shows more solid than the pillar-supported micro-disk lasers. It has similar threshold pump power compared with the pillar-supported micro-disk lasers.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Siamak Forouhar, Qiming Wang
Pages	284-286
Number of pages	3
State	Published - 1996
Event	Semiconductor Lasers II - Beijing, China Duration: Nov 6 1996 → Nov 7 1996

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2886

Other

Other	Semiconductor Lasers II
City	Beijing, China
Period	11/6/96 → 11/7/96

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

@inproceedings{2010a850bb634f478c4f3075c77191fe,

title = "Wafer bonding technique for fabricating 1.5-um InGaAs/InGaAsP pillar-free microdisk lasers",

abstract = "A new wafer bonding-etching technique has been developed successfully for micro-disk laser fabrication. Pillar-free micro-disk lasers have been realized. The micro-disk is placed on low refractive index material such as SiO 2 and surrounded by SiO 2 and air. The pillar-free micro-disk laser shows more solid than the pillar-supported micro-disk lasers. It has similar threshold pump power compared with the pillar-supported micro-disk lasers.",

author = "Wu, {Sheng Li} and Lijun Wang and Jianping Zhang and Liwei Wang and Ho, {Seng Tiong}",

year = "1996",

language = "English (US)",

isbn = "0819422878",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

pages = "284--286",

editor = "Siamak Forouhar and Qiming Wang",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

note = "Semiconductor Lasers II ; Conference date: 06-11-1996 Through 07-11-1996",

}

Wu, SL, Wang, L, Zhang, J, Wang, L & Ho, ST 1996, Wafer bonding technique for fabricating 1.5-um InGaAs/InGaAsP pillar-free microdisk lasers. in S Forouhar & Q Wang (eds), Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 2886, pp. 284-286, Semiconductor Lasers II, Beijing, China, 11/6/96.

Wafer bonding technique for fabricating 1.5-um InGaAs/InGaAsP pillar-free microdisk lasers. / Wu, Sheng Li; Wang, Lijun; Zhang, Jianping et al.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / Siamak Forouhar; Qiming Wang. 1996. p. 284-286 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2886).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Wafer bonding technique for fabricating 1.5-um InGaAs/InGaAsP pillar-free microdisk lasers

AU - Wu, Sheng Li

AU - Wang, Lijun

AU - Zhang, Jianping

AU - Wang, Liwei

AU - Ho, Seng Tiong

PY - 1996

Y1 - 1996

N2 - A new wafer bonding-etching technique has been developed successfully for micro-disk laser fabrication. Pillar-free micro-disk lasers have been realized. The micro-disk is placed on low refractive index material such as SiO 2 and surrounded by SiO 2 and air. The pillar-free micro-disk laser shows more solid than the pillar-supported micro-disk lasers. It has similar threshold pump power compared with the pillar-supported micro-disk lasers.

AB - A new wafer bonding-etching technique has been developed successfully for micro-disk laser fabrication. Pillar-free micro-disk lasers have been realized. The micro-disk is placed on low refractive index material such as SiO 2 and surrounded by SiO 2 and air. The pillar-free micro-disk laser shows more solid than the pillar-supported micro-disk lasers. It has similar threshold pump power compared with the pillar-supported micro-disk lasers.

UR - http://www.scopus.com/inward/record.url?scp=0030398267&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030398267&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0030398267

SN - 0819422878

SN - 9780819422873

T3 - Proceedings of SPIE - The International Society for Optical Engineering

SP - 284

EP - 286

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Forouhar, Siamak

A2 - Wang, Qiming

T2 - Semiconductor Lasers II

Y2 - 6 November 1996 through 7 November 1996

ER -

Wafer bonding technique for fabricating 1.5-um InGaAs/InGaAsP pillar-free microdisk lasers

Abstract

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Other

ASJC Scopus subject areas

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