Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide

Sung Hun Jin; Seung Kyun Kang; In Tak Cho; Sang Youn Han; Ha Uk Chung; Dong Joon Lee; Jongmin Shin; Geun Woo Baek; Tae Il Kim; Jong Ho Lee; John A. Rogers

doi:10.1021/acsami.5b00086

Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide

Sung Hun Jin^*, Seung Kyun Kang, In Tak Cho, Sang Youn Han, Ha Uk Chung, Dong Joon Lee, Jongmin Shin, Geun Woo Baek, Tae Il Kim, Jong Ho Lee, John A. Rogers

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

123 Scopus citations

Abstract

This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiN_x, SiO_x, molybdenum, and poly(vinyl alcohol) (PVA). Collections of these types of physically transient a-IGZO TFTs and 5-stage ring oscillators (ROs), constructed with them, show field effect mobilities (∼10 cm²/Vs), on/off ratios (∼2 × 10⁶), subthreshold slopes (∼220 mV/dec), Ohmic contact properties, and oscillation frequency of 5.67 kHz at supply voltages of 19 V, all comparable to otherwise similar devices constructed in conventional ways with standard, nontransient materials. Studies of dissolution kinetics for a-IGZO films in deionized water, bovine serum, and phosphate buffer saline solution provide data of relevance for the potential use of these materials and this technology in temporary biomedical implants.

Original language	English (US)
Pages (from-to)	8268-8274
Number of pages	7
Journal	ACS Applied Materials and Interfaces
Volume	7
Issue number	15
DOIs	https://doi.org/10.1021/acsami.5b00086
State	Published - Apr 22 2015

Keywords

PVA
a-IGZO
dissolution
inverter
ring oscillators
transient electronics

ASJC Scopus subject areas

General Materials Science

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title = "Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide",

abstract = "This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, and poly(vinyl alcohol) (PVA). Collections of these types of physically transient a-IGZO TFTs and 5-stage ring oscillators (ROs), constructed with them, show field effect mobilities (∼10 cm2/Vs), on/off ratios (∼2 × 106), subthreshold slopes (∼220 mV/dec), Ohmic contact properties, and oscillation frequency of 5.67 kHz at supply voltages of 19 V, all comparable to otherwise similar devices constructed in conventional ways with standard, nontransient materials. Studies of dissolution kinetics for a-IGZO films in deionized water, bovine serum, and phosphate buffer saline solution provide data of relevance for the potential use of these materials and this technology in temporary biomedical implants.",

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AU - Chung, Ha Uk

AU - Lee, Dong Joon

AU - Shin, Jongmin

AU - Baek, Geun Woo

AU - Kim, Tae Il

AU - Lee, Jong Ho

AU - Rogers, John A.

PY - 2015/4/22

Y1 - 2015/4/22

N2 - This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, and poly(vinyl alcohol) (PVA). Collections of these types of physically transient a-IGZO TFTs and 5-stage ring oscillators (ROs), constructed with them, show field effect mobilities (∼10 cm2/Vs), on/off ratios (∼2 × 106), subthreshold slopes (∼220 mV/dec), Ohmic contact properties, and oscillation frequency of 5.67 kHz at supply voltages of 19 V, all comparable to otherwise similar devices constructed in conventional ways with standard, nontransient materials. Studies of dissolution kinetics for a-IGZO films in deionized water, bovine serum, and phosphate buffer saline solution provide data of relevance for the potential use of these materials and this technology in temporary biomedical implants.

AB - This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, and poly(vinyl alcohol) (PVA). Collections of these types of physically transient a-IGZO TFTs and 5-stage ring oscillators (ROs), constructed with them, show field effect mobilities (∼10 cm2/Vs), on/off ratios (∼2 × 106), subthreshold slopes (∼220 mV/dec), Ohmic contact properties, and oscillation frequency of 5.67 kHz at supply voltages of 19 V, all comparable to otherwise similar devices constructed in conventional ways with standard, nontransient materials. Studies of dissolution kinetics for a-IGZO films in deionized water, bovine serum, and phosphate buffer saline solution provide data of relevance for the potential use of these materials and this technology in temporary biomedical implants.

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Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide

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