Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide

Sung Hun Jin*, Seung Kyun Kang, In Tak Cho, Sang Youn Han, Ha Uk Chung, Dong Joon Lee, Jongmin Shin, Geun Woo Baek, Tae Il Kim, Jong Ho Lee, John A. Rogers

*Corresponding author for this work

Research output: Contribution to journalArticle

67 Scopus citations

Abstract

This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, and poly(vinyl alcohol) (PVA). Collections of these types of physically transient a-IGZO TFTs and 5-stage ring oscillators (ROs), constructed with them, show field effect mobilities (∼10 cm2/Vs), on/off ratios (∼2 × 106), subthreshold slopes (∼220 mV/dec), Ohmic contact properties, and oscillation frequency of 5.67 kHz at supply voltages of 19 V, all comparable to otherwise similar devices constructed in conventional ways with standard, nontransient materials. Studies of dissolution kinetics for a-IGZO films in deionized water, bovine serum, and phosphate buffer saline solution provide data of relevance for the potential use of these materials and this technology in temporary biomedical implants.

Original languageEnglish (US)
Pages (from-to)8268-8274
Number of pages7
JournalACS Applied Materials and Interfaces
Volume7
Issue number15
DOIs
StatePublished - Apr 22 2015

Keywords

  • PVA
  • a-IGZO
  • dissolution
  • inverter
  • ring oscillators
  • transient electronics

ASJC Scopus subject areas

  • Materials Science(all)

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    Jin, S. H., Kang, S. K., Cho, I. T., Han, S. Y., Chung, H. U., Lee, D. J., Shin, J., Baek, G. W., Kim, T. I., Lee, J. H., & Rogers, J. A. (2015). Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide. ACS Applied Materials and Interfaces, 7(15), 8268-8274. https://doi.org/10.1021/acsami.5b00086