Weibull analysis of dielectric breakdown in a self-assembled nanodielectric for organic transistors

Ruth A. Schlitz; Kunho Yoon; Lisa A. Fredin; Young Geun Ha; Mark A. Ratner; Tobin J. Marks; Lincoln J. Lauhon

doi:10.1021/jz101325r

Weibull analysis of dielectric breakdown in a self-assembled nanodielectric for organic transistors

Ruth A. Schlitz, Kunho Yoon, Lisa A. Fredin, Young Geun Ha, Mark A. Ratner, Tobin J. Marks, Lincoln J. Lauhon

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

The effect of thermal annealing on leakage current and dielectric breakdown in self-assembled nanodielectric (SAND) metal-insulator-semiconductor (MIS) devices is investigated. Annealing at temperatures of 300 °C for 120 s in a reducing atmosphere significantly reduces the leakage current density at typical operating voltages (V_g = 3 V) while greatly narrowing the distribution of breakdown voltages. The threshold breakdown voltage is characterized by a Weibull distribution of slope 4.5 prior to thermal annealing, and by 12 post annealing. A comparison of the breakdown characteristics of conventional inorganic dielectrics with those of SAND demonstrates that self-assembly is a viable approach to fabricating highly reliable dielectric materials for unconventional electronics.

Original language	English (US)
Pages (from-to)	3292-3297
Number of pages	6
Journal	Journal of Physical Chemistry Letters
Volume	1
Issue number	22
DOIs	https://doi.org/10.1021/jz101325r
State	Published - Nov 18 2010

ASJC Scopus subject areas

General Materials Science
Physical and Theoretical Chemistry

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@article{716e4f25173948e68be4d990315f99be,

title = "Weibull analysis of dielectric breakdown in a self-assembled nanodielectric for organic transistors",

abstract = "The effect of thermal annealing on leakage current and dielectric breakdown in self-assembled nanodielectric (SAND) metal-insulator-semiconductor (MIS) devices is investigated. Annealing at temperatures of 300 °C for 120 s in a reducing atmosphere significantly reduces the leakage current density at typical operating voltages (Vg = 3 V) while greatly narrowing the distribution of breakdown voltages. The threshold breakdown voltage is characterized by a Weibull distribution of slope 4.5 prior to thermal annealing, and by 12 post annealing. A comparison of the breakdown characteristics of conventional inorganic dielectrics with those of SAND demonstrates that self-assembly is a viable approach to fabricating highly reliable dielectric materials for unconventional electronics.",

author = "Schlitz, {Ruth A.} and Kunho Yoon and Fredin, {Lisa A.} and Ha, {Young Geun} and Ratner, {Mark A.} and Marks, {Tobin J.} and Lauhon, {Lincoln J.}",

year = "2010",

month = nov,

day = "18",

doi = "10.1021/jz101325r",

language = "English (US)",

volume = "1",

pages = "3292--3297",

journal = "Journal of Physical Chemistry Letters",

issn = "1948-7185",

publisher = "American Chemical Society",

number = "22",

}

TY - JOUR

T1 - Weibull analysis of dielectric breakdown in a self-assembled nanodielectric for organic transistors

AU - Schlitz, Ruth A.

AU - Yoon, Kunho

AU - Fredin, Lisa A.

AU - Ha, Young Geun

AU - Ratner, Mark A.

AU - Marks, Tobin J.

AU - Lauhon, Lincoln J.

PY - 2010/11/18

Y1 - 2010/11/18

N2 - The effect of thermal annealing on leakage current and dielectric breakdown in self-assembled nanodielectric (SAND) metal-insulator-semiconductor (MIS) devices is investigated. Annealing at temperatures of 300 °C for 120 s in a reducing atmosphere significantly reduces the leakage current density at typical operating voltages (Vg = 3 V) while greatly narrowing the distribution of breakdown voltages. The threshold breakdown voltage is characterized by a Weibull distribution of slope 4.5 prior to thermal annealing, and by 12 post annealing. A comparison of the breakdown characteristics of conventional inorganic dielectrics with those of SAND demonstrates that self-assembly is a viable approach to fabricating highly reliable dielectric materials for unconventional electronics.

AB - The effect of thermal annealing on leakage current and dielectric breakdown in self-assembled nanodielectric (SAND) metal-insulator-semiconductor (MIS) devices is investigated. Annealing at temperatures of 300 °C for 120 s in a reducing atmosphere significantly reduces the leakage current density at typical operating voltages (Vg = 3 V) while greatly narrowing the distribution of breakdown voltages. The threshold breakdown voltage is characterized by a Weibull distribution of slope 4.5 prior to thermal annealing, and by 12 post annealing. A comparison of the breakdown characteristics of conventional inorganic dielectrics with those of SAND demonstrates that self-assembly is a viable approach to fabricating highly reliable dielectric materials for unconventional electronics.

UR - http://www.scopus.com/inward/record.url?scp=78649642168&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78649642168&partnerID=8YFLogxK

U2 - 10.1021/jz101325r

DO - 10.1021/jz101325r

M3 - Article

AN - SCOPUS:78649642168

SN - 1948-7185

VL - 1

SP - 3292

EP - 3297

JO - Journal of Physical Chemistry Letters

JF - Journal of Physical Chemistry Letters

IS - 22

ER -

Weibull analysis of dielectric breakdown in a self-assembled nanodielectric for organic transistors

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