Weighted Mobility

G. Jeffrey Snyder*, Alemayouh H. Snyder, Maxwell Wood, Ramya Gurunathan, Berhanu H. Snyder, Changning Niu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

273 Scopus citations


Engineering semiconductor devices requires an understanding of charge carrier mobility. Typically, mobilities are estimated using Hall effect and electrical resistivity meausrements, which are are routinely performed at room temperature and below, in materials with mobilities greater than 1 cm2 V-1 s-1. With the availability of combined Seebeck coefficient and electrical resistivity measurement systems, it is now easy to measure the weighted mobility (electron mobility weighted by the density of electronic states). A simple method to calculate the weighted mobility from Seebeck coefficient and electrical resistivity measurements is introduced, which gives good results at room temperature and above, and for mobilities as low as 10−3 cm2 V-1 s-1, (Formula presented.) Here, μw is the weighted mobility, ρ is the electrical resistivity measured in mΩ cm, T is the absolute temperature in K, S is the Seebeck coefficient, and kB/e = 86.3 µV K–1. Weighted mobility analysis can elucidate the electronic structure and scattering mechanisms in materials and is particularly helpful in understanding and optimizing thermoelectric systems.

Original languageEnglish (US)
Article number2001537
JournalAdvanced Materials
Issue number25
StatePublished - Jun 1 2020


  • electrical measurements
  • electrical transport
  • mobility
  • organic semiconductors
  • photovoltaics
  • semiconductors
  • thermoelectrics

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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