Well resolved room-temperature photovoltage spectra of GaAs-GaInP quantum wells and superlattices

Xiaoguang He*, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

We report the first well resolved room-temperature photovoltage spectra due to the sublevel transitions in the GaInP-GaAs superlattices and multiquantum wells grown by low pressure metalorganic chemical vapor deposition. Sharp well resolved peaks attributed to exciton absorption of the electron-to-light hole and electron-to-heavy hole have been observed at room temperature. This indicates that GaAs-GaInP is a promising material for the application of the modulators, optical switches, and optical bistable divices. Satisfactory agreements between experimental measurements and theoretical results have been obtained. These results demonstrate that photovoltage spectroscopy is a simple, but very powerful tool to study quantum confinement structures.

Original languageEnglish (US)
Pages (from-to)618-620
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number6
DOIs
StatePublished - 1993

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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