Well resolved room-temperature photovoltage spectra of GaAs-GaInP quantum wells and superlattices

Xiaoguang He; Manijeh Razeghi

doi:10.1063/1.108874

Well resolved room-temperature photovoltage spectra of GaAs-GaInP quantum wells and superlattices

Xiaoguang He^*, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We report the first well resolved room-temperature photovoltage spectra due to the sublevel transitions in the GaInP-GaAs superlattices and multiquantum wells grown by low pressure metalorganic chemical vapor deposition. Sharp well resolved peaks attributed to exciton absorption of the electron-to-light hole and electron-to-heavy hole have been observed at room temperature. This indicates that GaAs-GaInP is a promising material for the application of the modulators, optical switches, and optical bistable divices. Satisfactory agreements between experimental measurements and theoretical results have been obtained. These results demonstrate that photovoltage spectroscopy is a simple, but very powerful tool to study quantum confinement structures.

Original language	English (US)
Pages (from-to)	618-620
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	6
DOIs	https://doi.org/10.1063/1.108874
State	Published - 1993

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{24f5bed3ee5a4d21a97a100169ca6abf,

title = "Well resolved room-temperature photovoltage spectra of GaAs-GaInP quantum wells and superlattices",

abstract = "We report the first well resolved room-temperature photovoltage spectra due to the sublevel transitions in the GaInP-GaAs superlattices and multiquantum wells grown by low pressure metalorganic chemical vapor deposition. Sharp well resolved peaks attributed to exciton absorption of the electron-to-light hole and electron-to-heavy hole have been observed at room temperature. This indicates that GaAs-GaInP is a promising material for the application of the modulators, optical switches, and optical bistable divices. Satisfactory agreements between experimental measurements and theoretical results have been obtained. These results demonstrate that photovoltage spectroscopy is a simple, but very powerful tool to study quantum confinement structures.",

author = "Xiaoguang He and Manijeh Razeghi",

year = "1993",

doi = "10.1063/1.108874",

language = "English (US)",

volume = "62",

pages = "618--620",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - Well resolved room-temperature photovoltage spectra of GaAs-GaInP quantum wells and superlattices

AU - He, Xiaoguang

AU - Razeghi, Manijeh

PY - 1993

Y1 - 1993

N2 - We report the first well resolved room-temperature photovoltage spectra due to the sublevel transitions in the GaInP-GaAs superlattices and multiquantum wells grown by low pressure metalorganic chemical vapor deposition. Sharp well resolved peaks attributed to exciton absorption of the electron-to-light hole and electron-to-heavy hole have been observed at room temperature. This indicates that GaAs-GaInP is a promising material for the application of the modulators, optical switches, and optical bistable divices. Satisfactory agreements between experimental measurements and theoretical results have been obtained. These results demonstrate that photovoltage spectroscopy is a simple, but very powerful tool to study quantum confinement structures.

AB - We report the first well resolved room-temperature photovoltage spectra due to the sublevel transitions in the GaInP-GaAs superlattices and multiquantum wells grown by low pressure metalorganic chemical vapor deposition. Sharp well resolved peaks attributed to exciton absorption of the electron-to-light hole and electron-to-heavy hole have been observed at room temperature. This indicates that GaAs-GaInP is a promising material for the application of the modulators, optical switches, and optical bistable divices. Satisfactory agreements between experimental measurements and theoretical results have been obtained. These results demonstrate that photovoltage spectroscopy is a simple, but very powerful tool to study quantum confinement structures.

UR - http://www.scopus.com/inward/record.url?scp=21544464668&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21544464668&partnerID=8YFLogxK

U2 - 10.1063/1.108874

DO - 10.1063/1.108874

M3 - Article

AN - SCOPUS:21544464668

VL - 62

SP - 618

EP - 620

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

ER -

Well resolved room-temperature photovoltage spectra of GaAs-GaInP quantum wells and superlattices

Abstract

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