Abstract
Photodetectors with internal gain are of great interest for imaging applications, since internal gain reduces the effective noise of readout electronics. High-gain photodetectors have been demonstrated, but only individually rather than as a full array in a camera. Consequently, there has been little investigation of the interaction between camera complementary metal oxide semiconductor (CMOS) electronics and the slow response time that high-gain photodetectors often exhibit. Here we show that this interaction filters shot noise and causes noise statistics to differ from the common Poisson distribution. As an example, we investigate a 320 × 256 array of InGaAs/InP high-gain phototransistors bonded to a CMOS readout chip. We demonstrate the filtering effects and discuss their consequences, including new (to the best of our knowledge) methods for extracting gain and increasing dynamic range.
Original language | English (US) |
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Pages (from-to) | 3009-3012 |
Number of pages | 4 |
Journal | Optics Letters |
Volume | 45 |
Issue number | 11 |
DOIs | |
State | Published - Jun 1 2020 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics