Widely tunable room temperature semiconductor terahertz source

Q. Y. Lu; S. Slivken; N. Bandyopadhyay; Y. Bai; M. Razeghi

doi:10.1063/1.4902245

Widely tunable room temperature semiconductor terahertz source

Q. Y. Lu^*, S. Slivken, N. Bandyopadhyay, Y. Bai, M. Razeghi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

70 Scopus citations

Abstract

We present a widely tunable, monolithic terahertz source based on intracavity difference frequency generation within a mid-infrared quantum cascade laser at room temperature. A three-section ridge waveguide laser design with two sampled grating sections and a distributed-Bragg section is used to achieve the terahertz (THz) frequency tuning. Room temperature single mode THz emission with a wide tunable frequency range of 2.6-4.2 THz (∼47% of the central frequency) and THz power up to 0.1 mW is demonstrated, making such device an ideal candidate for THz spectroscopy and sensing.

Original language	English (US)
Article number	201102
Journal	Applied Physics Letters
Volume	105
Issue number	20
DOIs	https://doi.org/10.1063/1.4902245
State	Published - Nov 17 2014

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4902245

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title = "Widely tunable room temperature semiconductor terahertz source",

abstract = "We present a widely tunable, monolithic terahertz source based on intracavity difference frequency generation within a mid-infrared quantum cascade laser at room temperature. A three-section ridge waveguide laser design with two sampled grating sections and a distributed-Bragg section is used to achieve the terahertz (THz) frequency tuning. Room temperature single mode THz emission with a wide tunable frequency range of 2.6-4.2 THz (∼47% of the central frequency) and THz power up to 0.1 mW is demonstrated, making such device an ideal candidate for THz spectroscopy and sensing.",

author = "Lu, {Q. Y.} and S. Slivken and N. Bandyopadhyay and Y. Bai and M. Razeghi",

note = "Publisher Copyright: {\textcopyright} 2014 AIP Publishing LLC.",

year = "2014",

month = nov,

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doi = "10.1063/1.4902245",

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volume = "105",

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TY - JOUR

T1 - Widely tunable room temperature semiconductor terahertz source

AU - Lu, Q. Y.

AU - Slivken, S.

AU - Bandyopadhyay, N.

AU - Bai, Y.

AU - Razeghi, M.

PY - 2014/11/17

Y1 - 2014/11/17

N2 - We present a widely tunable, monolithic terahertz source based on intracavity difference frequency generation within a mid-infrared quantum cascade laser at room temperature. A three-section ridge waveguide laser design with two sampled grating sections and a distributed-Bragg section is used to achieve the terahertz (THz) frequency tuning. Room temperature single mode THz emission with a wide tunable frequency range of 2.6-4.2 THz (∼47% of the central frequency) and THz power up to 0.1 mW is demonstrated, making such device an ideal candidate for THz spectroscopy and sensing.

AB - We present a widely tunable, monolithic terahertz source based on intracavity difference frequency generation within a mid-infrared quantum cascade laser at room temperature. A three-section ridge waveguide laser design with two sampled grating sections and a distributed-Bragg section is used to achieve the terahertz (THz) frequency tuning. Room temperature single mode THz emission with a wide tunable frequency range of 2.6-4.2 THz (∼47% of the central frequency) and THz power up to 0.1 mW is demonstrated, making such device an ideal candidate for THz spectroscopy and sensing.

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DO - 10.1063/1.4902245

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VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 201102

ER -

Widely tunable room temperature semiconductor terahertz source

Abstract

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