Widely tunable room temperature semiconductor terahertz source

Q. Y. Lu*, S. Slivken, N. Bandyopadhyay, Y. Bai, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

56 Scopus citations

Abstract

We present a widely tunable, monolithic terahertz source based on intracavity difference frequency generation within a mid-infrared quantum cascade laser at room temperature. A three-section ridge waveguide laser design with two sampled grating sections and a distributed-Bragg section is used to achieve the terahertz (THz) frequency tuning. Room temperature single mode THz emission with a wide tunable frequency range of 2.6-4.2 THz (∼47% of the central frequency) and THz power up to 0.1 mW is demonstrated, making such device an ideal candidate for THz spectroscopy and sensing.

Original languageEnglish (US)
Article number201102
JournalApplied Physics Letters
Volume105
Issue number20
DOIs
StatePublished - Nov 17 2014

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Widely tunable room temperature semiconductor terahertz source'. Together they form a unique fingerprint.

  • Cite this