Width-dependent statistical leakage modeling for random dopant induced threshold voltage shift

Jie Gu; Sachin S. Sapatnekar; Chris Kim

doi:10.1109/DAC.2007.375130

Width-dependent statistical leakage modeling for random dopant induced threshold voltage shift

Jie Gu^*, Sachin S. Sapatnekar, Chris Kim

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

13 Scopus citations

Abstract

Statistical behavior of device leakage and threshold voltage shows a strong width dependency under microscopic random dopant fluctuation. Leakage estimation using the conventional square-root method shows a discrepancy as large as 45% compared to the real case because it fails to model the effective V _T shift in the subthreshold region. This paper presents a width-dependent statistical leakage model with an estimation error less than 5%. Design examples on SRAMs and domino circuits demonstrate the significance of the proposed model.

Original language	English (US)
Title of host publication	2007 44th ACM/IEEE Design Automation Conference, DAC'07
Pages	87-92
Number of pages	6
DOIs	https://doi.org/10.1109/DAC.2007.375130
State	Published - Aug 2 2007
Event	2007 44th ACM/IEEE Design Automation Conference, DAC'07 - San Diego, CA, United States Duration: Jun 4 2007 → Jun 8 2007

Other

Other	2007 44th ACM/IEEE Design Automation Conference, DAC'07
Country/Territory	United States
City	San Diego, CA
Period	6/4/07 → 6/8/07

Keywords

Leakage
Process variation
Random dopant fluctuation

ASJC Scopus subject areas

Hardware and Architecture
Control and Systems Engineering

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10.1109/DAC.2007.375130

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title = "Width-dependent statistical leakage modeling for random dopant induced threshold voltage shift",

abstract = "Statistical behavior of device leakage and threshold voltage shows a strong width dependency under microscopic random dopant fluctuation. Leakage estimation using the conventional square-root method shows a discrepancy as large as 45% compared to the real case because it fails to model the effective V T shift in the subthreshold region. This paper presents a width-dependent statistical leakage model with an estimation error less than 5%. Design examples on SRAMs and domino circuits demonstrate the significance of the proposed model.",

keywords = "Leakage, Process variation, Random dopant fluctuation",

author = "Jie Gu and Sapatnekar, {Sachin S.} and Chris Kim",

year = "2007",

month = aug,

day = "2",

doi = "10.1109/DAC.2007.375130",

language = "English (US)",

isbn = "1595936270",

pages = "87--92",

booktitle = "2007 44th ACM/IEEE Design Automation Conference, DAC'07",

note = "2007 44th ACM/IEEE Design Automation Conference, DAC'07 ; Conference date: 04-06-2007 Through 08-06-2007",

}

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T1 - Width-dependent statistical leakage modeling for random dopant induced threshold voltage shift

AU - Gu, Jie

AU - Sapatnekar, Sachin S.

AU - Kim, Chris

PY - 2007/8/2

Y1 - 2007/8/2

N2 - Statistical behavior of device leakage and threshold voltage shows a strong width dependency under microscopic random dopant fluctuation. Leakage estimation using the conventional square-root method shows a discrepancy as large as 45% compared to the real case because it fails to model the effective V T shift in the subthreshold region. This paper presents a width-dependent statistical leakage model with an estimation error less than 5%. Design examples on SRAMs and domino circuits demonstrate the significance of the proposed model.

AB - Statistical behavior of device leakage and threshold voltage shows a strong width dependency under microscopic random dopant fluctuation. Leakage estimation using the conventional square-root method shows a discrepancy as large as 45% compared to the real case because it fails to model the effective V T shift in the subthreshold region. This paper presents a width-dependent statistical leakage model with an estimation error less than 5%. Design examples on SRAMs and domino circuits demonstrate the significance of the proposed model.

KW - Leakage

KW - Process variation

KW - Random dopant fluctuation

UR - http://www.scopus.com/inward/record.url?scp=34547328040&partnerID=8YFLogxK

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U2 - 10.1109/DAC.2007.375130

DO - 10.1109/DAC.2007.375130

M3 - Conference contribution

AN - SCOPUS:34547328040

SN - 1595936270

SN - 9781595936271

SP - 87

EP - 92

BT - 2007 44th ACM/IEEE Design Automation Conference, DAC'07

T2 - 2007 44th ACM/IEEE Design Automation Conference, DAC'07

Y2 - 4 June 2007 through 8 June 2007

ER -

Width-dependent statistical leakage modeling for random dopant induced threshold voltage shift

Abstract

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Keywords

ASJC Scopus subject areas

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