INIS
modeling
100%
voltage
100%
randomness
100%
doped materials
100%
width
100%
leakage
100%
design
25%
devices
25%
comparative evaluations
25%
errors
25%
roots
25%
fluctuations
25%
Earth and Planetary Sciences
Leakage
100%
Width
100%
Threshold Voltage
100%
Model
75%
Show
50%
Dependence
25%
Error
25%
Variation
25%
Square
25%
Significance
25%
Convention
25%
Engineering
Electric Potential
100%
Dopants
100%
Models
100%
Square Root
33%
Estimation Error
33%
Networks (Circuits)
33%
Design
33%
Demonstrates
33%
Estimation
33%
Root Method
33%
Computer Science
Threshold Voltage
100%
Models
100%
Estimation Error
33%
Design
33%
Mathematics
Square Root
100%
Modeling
100%
Material Science
Doping (Additives)
100%
Electronic Circuit
50%
Devices
50%