Write Error Rate and Read Disturbance in Electric-Field-Controlled Magnetic Random-Access Memory

Cécile Grezes; Hochul Lee; Albert Lee; Shaodi Wang; Farbod Ebrahimi; Xiang Li; Kin Wong; Jordan A. Katine; Berthold Ocker; Jürgen Langer; Puneet Gupta; Pedram Khalili Amiri; Kang L. Wang

doi:10.1109/LMAG.2016.2630667

Write Error Rate and Read Disturbance in Electric-Field-Controlled Magnetic Random-Access Memory

Cécile Grezes^*, Hochul Lee, Albert Lee, Shaodi Wang, Farbod Ebrahimi, Xiang Li, Kin Wong, Jordan A. Katine, Berthold Ocker, Jürgen Langer, Puneet Gupta, Pedram Khalili Amiri, Kang L. Wang

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

We report experimental results on write error rate and read disturbance as a function of read/write pulse width and amplitude in electric-field-controlled magnetic tunnel junctions (MTJs). Results are shown for 50 nm perpendicular MTJs. We also design and simulate the performance of a 256 kilobit (Kbit) magneto-electric random-access memory (MeRAM) macro in a 28 nm complementary metal-oxide semiconductor (CMOS) process, based on the measured MTJ device data. The results show that existing electric-field-controlled MTJs are capable of delivering write error rates below $10^{{-9}}$ for 10 ns total write and verify time and read disturbance below $10^{{-16}}$ for 2 ns read time in a 256 Kbit MeRAM array.

Original language	English (US)
Article number	7748496
Journal	IEEE Magnetics Letters
Volume	8
DOIs	https://doi.org/10.1109/LMAG.2016.2630667
State	Published - 2017

Funding

This work was supported in part by the National Science Foundation Nanosystems Engineering Research Center for Translational Applications of Nanoscale Multiferroic Systems (TANMS). The work at Inston Inc. was supported in part by a Phase II NSF Small Business Innovation Research award. The authors would like to acknowledge the collaboration of this research with King Abdul-Aziz City for Science and Technology (KACST) via The Center of Excellence for Green Nanotechnologies (CEGN). The authors would also like to thank the members of the UCLA Device Research Laboratory, TANMS, CEGN, and Inston Inc. for fruitful discussions.

Keywords

Spin electronics
electrical control of spin
magnetic random-access memory
magnetic tunnel junctions

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1109/LMAG.2016.2630667

Cite this

@article{c7d50b4c2b164a04b99c691a7caf806a,

title = "Write Error Rate and Read Disturbance in Electric-Field-Controlled Magnetic Random-Access Memory",

abstract = "We report experimental results on write error rate and read disturbance as a function of read/write pulse width and amplitude in electric-field-controlled magnetic tunnel junctions (MTJs). Results are shown for 50 nm perpendicular MTJs. We also design and simulate the performance of a 256 kilobit (Kbit) magneto-electric random-access memory (MeRAM) macro in a 28 nm complementary metal-oxide semiconductor (CMOS) process, based on the measured MTJ device data. The results show that existing electric-field-controlled MTJs are capable of delivering write error rates below \$10\textasciicircum{}\{\{-9\}\}\$ for 10 ns total write and verify time and read disturbance below \$10\textasciicircum{}\{\{-16\}\}\$ for 2 ns read time in a 256 Kbit MeRAM array.",

keywords = "Spin electronics, electrical control of spin, magnetic random-access memory, magnetic tunnel junctions",

author = "C{\'e}cile Grezes and Hochul Lee and Albert Lee and Shaodi Wang and Farbod Ebrahimi and Xiang Li and Kin Wong and Katine, \{Jordan A.\} and Berthold Ocker and J{\"u}rgen Langer and Puneet Gupta and \{Khalili Amiri\}, Pedram and Wang, \{Kang L.\}",

note = "Funding Information: This work was supported in part by the National Science Foundation Nanosystems Engineering Research Center for Translational Applications of Nanoscale Multiferroic Systems (TANMS). The work at Inston Inc. was supported in part by a Phase II NSF Small Business Innovation Research award. The authors would like to acknowledge the collaboration of this research with King Abdul-Aziz City for Science and Technology (KACST) via The Center of Excellence for Green Nanotechnologies (CEGN). The authors would also like to thank the members of the UCLA Device Research Laboratory, TANMS, CEGN, and Inston Inc. for fruitful discussions. Publisher Copyright: {\textcopyright} 2010-2012 IEEE.",

year = "2017",

doi = "10.1109/LMAG.2016.2630667",

language = "English (US)",

volume = "8",

journal = "IEEE Magnetics Letters",

issn = "1949-307X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Write Error Rate and Read Disturbance in Electric-Field-Controlled Magnetic Random-Access Memory

AU - Grezes, Cécile

AU - Lee, Hochul

AU - Lee, Albert

AU - Wang, Shaodi

AU - Ebrahimi, Farbod

AU - Li, Xiang

AU - Wong, Kin

AU - Katine, Jordan A.

AU - Ocker, Berthold

AU - Langer, Jürgen

AU - Gupta, Puneet

AU - Khalili Amiri, Pedram

AU - Wang, Kang L.

N1 - Funding Information: This work was supported in part by the National Science Foundation Nanosystems Engineering Research Center for Translational Applications of Nanoscale Multiferroic Systems (TANMS). The work at Inston Inc. was supported in part by a Phase II NSF Small Business Innovation Research award. The authors would like to acknowledge the collaboration of this research with King Abdul-Aziz City for Science and Technology (KACST) via The Center of Excellence for Green Nanotechnologies (CEGN). The authors would also like to thank the members of the UCLA Device Research Laboratory, TANMS, CEGN, and Inston Inc. for fruitful discussions. Publisher Copyright: © 2010-2012 IEEE.

PY - 2017

Y1 - 2017

N2 - We report experimental results on write error rate and read disturbance as a function of read/write pulse width and amplitude in electric-field-controlled magnetic tunnel junctions (MTJs). Results are shown for 50 nm perpendicular MTJs. We also design and simulate the performance of a 256 kilobit (Kbit) magneto-electric random-access memory (MeRAM) macro in a 28 nm complementary metal-oxide semiconductor (CMOS) process, based on the measured MTJ device data. The results show that existing electric-field-controlled MTJs are capable of delivering write error rates below $10^{{-9}}$ for 10 ns total write and verify time and read disturbance below $10^{{-16}}$ for 2 ns read time in a 256 Kbit MeRAM array.

AB - We report experimental results on write error rate and read disturbance as a function of read/write pulse width and amplitude in electric-field-controlled magnetic tunnel junctions (MTJs). Results are shown for 50 nm perpendicular MTJs. We also design and simulate the performance of a 256 kilobit (Kbit) magneto-electric random-access memory (MeRAM) macro in a 28 nm complementary metal-oxide semiconductor (CMOS) process, based on the measured MTJ device data. The results show that existing electric-field-controlled MTJs are capable of delivering write error rates below $10^{{-9}}$ for 10 ns total write and verify time and read disturbance below $10^{{-16}}$ for 2 ns read time in a 256 Kbit MeRAM array.

KW - Spin electronics

KW - electrical control of spin

KW - magnetic random-access memory

KW - magnetic tunnel junctions

UR - http://www.scopus.com/inward/record.url?scp=85017605024&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85017605024&partnerID=8YFLogxK

U2 - 10.1109/LMAG.2016.2630667

DO - 10.1109/LMAG.2016.2630667

M3 - Article

AN - SCOPUS:85017605024

SN - 1949-307X

VL - 8

JO - IEEE Magnetics Letters

JF - IEEE Magnetics Letters

M1 - 7748496

ER -

Write Error Rate and Read Disturbance in Electric-Field-Controlled Magnetic Random-Access Memory

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