@article{c7d50b4c2b164a04b99c691a7caf806a,
title = "Write Error Rate and Read Disturbance in Electric-Field-Controlled Magnetic Random-Access Memory",
abstract = "We report experimental results on write error rate and read disturbance as a function of read/write pulse width and amplitude in electric-field-controlled magnetic tunnel junctions (MTJs). Results are shown for 50 nm perpendicular MTJs. We also design and simulate the performance of a 256 kilobit (Kbit) magneto-electric random-access memory (MeRAM) macro in a 28 nm complementary metal-oxide semiconductor (CMOS) process, based on the measured MTJ device data. The results show that existing electric-field-controlled MTJs are capable of delivering write error rates below $10^{{-9}}$ for 10 ns total write and verify time and read disturbance below $10^{{-16}}$ for 2 ns read time in a 256 Kbit MeRAM array.",
keywords = "Spin electronics, electrical control of spin, magnetic random-access memory, magnetic tunnel junctions",
author = "C{\'e}cile Grezes and Hochul Lee and Albert Lee and Shaodi Wang and Farbod Ebrahimi and Xiang Li and Kin Wong and Katine, {Jordan A.} and Berthold Ocker and J{\"u}rgen Langer and Puneet Gupta and {Khalili Amiri}, Pedram and Wang, {Kang L.}",
note = "Funding Information: This work was supported in part by the National Science Foundation Nanosystems Engineering Research Center for Translational Applications of Nanoscale Multiferroic Systems (TANMS). The work at Inston Inc. was supported in part by a Phase II NSF Small Business Innovation Research award. The authors would like to acknowledge the collaboration of this research with King Abdul-Aziz City for Science and Technology (KACST) via The Center of Excellence for Green Nanotechnologies (CEGN). The authors would also like to thank the members of the UCLA Device Research Laboratory, TANMS, CEGN, and Inston Inc. for fruitful discussions. Publisher Copyright: {\textcopyright} 2010-2012 IEEE.",
year = "2017",
doi = "10.1109/LMAG.2016.2630667",
language = "English (US)",
volume = "8",
journal = "IEEE Magnetics Letters",
issn = "1949-307X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
}