Write Error Rate and Read Disturbance in Electric-Field-Controlled Magnetic Random-Access Memory

Cécile Grezes*, Hochul Lee, Albert Lee, Shaodi Wang, Farbod Ebrahimi, Xiang Li, Kin Wong, Jordan A. Katine, Berthold Ocker, Jürgen Langer, Puneet Gupta, Pedram Khalili Amiri, Kang L. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

36 Scopus citations

Abstract

We report experimental results on write error rate and read disturbance as a function of read/write pulse width and amplitude in electric-field-controlled magnetic tunnel junctions (MTJs). Results are shown for 50 nm perpendicular MTJs. We also design and simulate the performance of a 256 kilobit (Kbit) magneto-electric random-access memory (MeRAM) macro in a 28 nm complementary metal-oxide semiconductor (CMOS) process, based on the measured MTJ device data. The results show that existing electric-field-controlled MTJs are capable of delivering write error rates below $10^{{-9}}$ for 10 ns total write and verify time and read disturbance below $10^{{-16}}$ for 2 ns read time in a 256 Kbit MeRAM array.

Original languageEnglish (US)
Article number7748496
JournalIEEE Magnetics Letters
Volume8
DOIs
StatePublished - 2017

Funding

This work was supported in part by the National Science Foundation Nanosystems Engineering Research Center for Translational Applications of Nanoscale Multiferroic Systems (TANMS). The work at Inston Inc. was supported in part by a Phase II NSF Small Business Innovation Research award. The authors would like to acknowledge the collaboration of this research with King Abdul-Aziz City for Science and Technology (KACST) via The Center of Excellence for Green Nanotechnologies (CEGN). The authors would also like to thank the members of the UCLA Device Research Laboratory, TANMS, CEGN, and Inston Inc. for fruitful discussions.

Keywords

  • Spin electronics
  • electrical control of spin
  • magnetic random-access memory
  • magnetic tunnel junctions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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