Write Error Rate and Read Disturbance in Electric-Field-Controlled Magnetic Random-Access Memory

Cécile Grezes*, Hochul Lee, Albert Lee, Shaodi Wang, Farbod Ebrahimi, Xiang Li, Kin Wong, Jordan A. Katine, Berthold Ocker, Jürgen Langer, Puneet Gupta, Pedram Khalili Amiri, Kang L. Wang

*Corresponding author for this work

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

We report experimental results on write error rate and read disturbance as a function of read/write pulse width and amplitude in electric-field-controlled magnetic tunnel junctions (MTJs). Results are shown for 50 nm perpendicular MTJs. We also design and simulate the performance of a 256 kilobit (Kbit) magneto-electric random-access memory (MeRAM) macro in a 28 nm complementary metal-oxide semiconductor (CMOS) process, based on the measured MTJ device data. The results show that existing electric-field-controlled MTJs are capable of delivering write error rates below $10^{{-9}}$ for 10 ns total write and verify time and read disturbance below $10^{{-16}}$ for 2 ns read time in a 256 Kbit MeRAM array.

Original languageEnglish (US)
Article number7748496
JournalIEEE Magnetics Letters
Volume8
DOIs
StatePublished - Jan 1 2017

Keywords

  • Spin electronics
  • electrical control of spin
  • magnetic random-access memory
  • magnetic tunnel junctions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Grezes, C., Lee, H., Lee, A., Wang, S., Ebrahimi, F., Li, X., Wong, K., Katine, J. A., Ocker, B., Langer, J., Gupta, P., Khalili Amiri, P., & Wang, K. L. (2017). Write Error Rate and Read Disturbance in Electric-Field-Controlled Magnetic Random-Access Memory. IEEE Magnetics Letters, 8, [7748496]. https://doi.org/10.1109/LMAG.2016.2630667