Write Error Rate and Read Disturbance in Electric-Field-Controlled Magnetic Random-Access Memory

Cécile Grezes; Hochul Lee; Albert Lee; Shaodi Wang; Farbod Ebrahimi; Xiang Li; Kin Wong; Jordan A. Katine; Berthold Ocker; Jürgen Langer; Puneet Gupta; Pedram Khalili Amiri; Kang L. Wang

doi:10.1109/LMAG.2016.2630667

Write Error Rate and Read Disturbance in Electric-Field-Controlled Magnetic Random-Access Memory

Cécile Grezes^*, Hochul Lee, Albert Lee, Shaodi Wang, Farbod Ebrahimi, Xiang Li, Kin Wong, Jordan A. Katine, Berthold Ocker, Jürgen Langer, Puneet Gupta, Pedram Khalili Amiri, Kang L. Wang

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article

19 Scopus citations

Abstract

We report experimental results on write error rate and read disturbance as a function of read/write pulse width and amplitude in electric-field-controlled magnetic tunnel junctions (MTJs). Results are shown for 50 nm perpendicular MTJs. We also design and simulate the performance of a 256 kilobit (Kbit) magneto-electric random-access memory (MeRAM) macro in a 28 nm complementary metal-oxide semiconductor (CMOS) process, based on the measured MTJ device data. The results show that existing electric-field-controlled MTJs are capable of delivering write error rates below $10^{{-9}}$ for 10 ns total write and verify time and read disturbance below $10^{{-16}}$ for 2 ns read time in a 256 Kbit MeRAM array.

Original language	English (US)
Article number	7748496
Journal	IEEE Magnetics Letters
Volume	8
DOIs	https://doi.org/10.1109/LMAG.2016.2630667
State	Published - Jan 1 2017

Keywords

Spin electronics
electrical control of spin
magnetic random-access memory
magnetic tunnel junctions

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1109/LMAG.2016.2630667

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Grezes, C., Lee, H., Lee, A., Wang, S., Ebrahimi, F., Li, X., Wong, K., Katine, J. A., Ocker, B., Langer, J., Gupta, P., Khalili Amiri, P., & Wang, K. L. (2017). Write Error Rate and Read Disturbance in Electric-Field-Controlled Magnetic Random-Access Memory. IEEE Magnetics Letters, 8, [7748496]. https://doi.org/10.1109/LMAG.2016.2630667

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abstract = "We report experimental results on write error rate and read disturbance as a function of read/write pulse width and amplitude in electric-field-controlled magnetic tunnel junctions (MTJs). Results are shown for 50 nm perpendicular MTJs. We also design and simulate the performance of a 256 kilobit (Kbit) magneto-electric random-access memory (MeRAM) macro in a 28 nm complementary metal-oxide semiconductor (CMOS) process, based on the measured MTJ device data. The results show that existing electric-field-controlled MTJs are capable of delivering write error rates below $10^{{-9}}$ for 10 ns total write and verify time and read disturbance below $10^{{-16}}$ for 2 ns read time in a 256 Kbit MeRAM array.",

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Write Error Rate and Read Disturbance in Electric-Field-Controlled Magnetic Random-Access Memory. / Grezes, Cécile; Lee, Hochul; Lee, Albert; Wang, Shaodi; Ebrahimi, Farbod; Li, Xiang; Wong, Kin; Katine, Jordan A.; Ocker, Berthold; Langer, Jürgen; Gupta, Puneet; Khalili Amiri, Pedram; Wang, Kang L.

In: IEEE Magnetics Letters, Vol. 8, 7748496, 01.01.2017.

Research output: Contribution to journal › Article

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AU - Wang, Shaodi

AU - Ebrahimi, Farbod

AU - Li, Xiang

AU - Wong, Kin

AU - Katine, Jordan A.

AU - Ocker, Berthold

AU - Langer, Jürgen

AU - Gupta, Puneet

AU - Khalili Amiri, Pedram

AU - Wang, Kang L.

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AB - We report experimental results on write error rate and read disturbance as a function of read/write pulse width and amplitude in electric-field-controlled magnetic tunnel junctions (MTJs). Results are shown for 50 nm perpendicular MTJs. We also design and simulate the performance of a 256 kilobit (Kbit) magneto-electric random-access memory (MeRAM) macro in a 28 nm complementary metal-oxide semiconductor (CMOS) process, based on the measured MTJ device data. The results show that existing electric-field-controlled MTJs are capable of delivering write error rates below $10^{{-9}}$ for 10 ns total write and verify time and read disturbance below $10^{{-16}}$ for 2 ns read time in a 256 Kbit MeRAM array.

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