X-ray analysis of Si/Ge/Si(001) heterolayer structures grown by surfactant mediated epitaxy

Brad P. Tinkham*, Duane M. Goodner, Donald A. Walko, Michael J Bedzyk

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

X-ray diffraction and x-ray standing waves (XSW) have been used to investigate the quality of epitaxial ultra-thin Ge films grown on Si(001) with and without Te as a surfactant. The efficacy of Te as a surfactant in this application has been debated. We measured samples between 1 and 10 ML in thickness and our results clearly indicate that Ge films grown with Te are superior to those grown without Te. The coherent positions and coherent fractions determined from XSW analysis agree well with those predicted by linear elasticity theory for Ge/Si(001). Furthermore, grazing incidence diffraction measurements (GIXD) suggests that 9 ML Ge grown on Si(001) with Te is strained in-plane while the same film grown without Te is relaxed.

Original languageEnglish (US)
Pages (from-to)143-148
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume696
StatePublished - Jan 1 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'X-ray analysis of Si/Ge/Si(001) heterolayer structures grown by surfactant mediated epitaxy'. Together they form a unique fingerprint.

Cite this