X-ray and Raman scattering characterization of Ge/Si buried layers

R. L. Headrick*, J. M. Baribeau, D. J. Lockwood, T. E. Jackman, M. J. Bedzyk

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


Germanium buried layers in (001) oriented silicon with thicknesses of 2-12 monolayers have been studied with synchrotron x-ray diffraction, x-ray reflectivity, and Raman scattering spectroscopy of visible light. Relaxation, strain, and intermixing have been observed via diffraction and intermixing is inferred from vibrational frequency shifts.

Original languageEnglish (US)
Pages (from-to)687-689
Number of pages3
JournalApplied Physics Letters
Issue number7
StatePublished - 1993

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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