X-ray and Raman scattering characterization of Ge/Si buried layers

R. L. Headrick; J. M. Baribeau; D. J. Lockwood; T. E. Jackman; M. J. Bedzyk

doi:10.1063/1.108840

X-ray and Raman scattering characterization of Ge/Si buried layers

R. L. Headrick^*, J. M. Baribeau, D. J. Lockwood, T. E. Jackman, M. J. Bedzyk

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Germanium buried layers in (001) oriented silicon with thicknesses of 2-12 monolayers have been studied with synchrotron x-ray diffraction, x-ray reflectivity, and Raman scattering spectroscopy of visible light. Relaxation, strain, and intermixing have been observed via diffraction and intermixing is inferred from vibrational frequency shifts.

Original language	English (US)
Pages (from-to)	687-689
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	7
DOIs	https://doi.org/10.1063/1.108840
State	Published - 1993

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.108840

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title = "X-ray and Raman scattering characterization of Ge/Si buried layers",

abstract = "Germanium buried layers in (001) oriented silicon with thicknesses of 2-12 monolayers have been studied with synchrotron x-ray diffraction, x-ray reflectivity, and Raman scattering spectroscopy of visible light. Relaxation, strain, and intermixing have been observed via diffraction and intermixing is inferred from vibrational frequency shifts.",

author = "Headrick, {R. L.} and Baribeau, {J. M.} and Lockwood, {D. J.} and Jackman, {T. E.} and Bedzyk, {M. J.}",

year = "1993",

doi = "10.1063/1.108840",

language = "English (US)",

volume = "62",

pages = "687--689",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

number = "7",

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TY - JOUR

T1 - X-ray and Raman scattering characterization of Ge/Si buried layers

AU - Headrick, R. L.

AU - Baribeau, J. M.

AU - Lockwood, D. J.

AU - Jackman, T. E.

AU - Bedzyk, M. J.

PY - 1993

Y1 - 1993

N2 - Germanium buried layers in (001) oriented silicon with thicknesses of 2-12 monolayers have been studied with synchrotron x-ray diffraction, x-ray reflectivity, and Raman scattering spectroscopy of visible light. Relaxation, strain, and intermixing have been observed via diffraction and intermixing is inferred from vibrational frequency shifts.

AB - Germanium buried layers in (001) oriented silicon with thicknesses of 2-12 monolayers have been studied with synchrotron x-ray diffraction, x-ray reflectivity, and Raman scattering spectroscopy of visible light. Relaxation, strain, and intermixing have been observed via diffraction and intermixing is inferred from vibrational frequency shifts.

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U2 - 10.1063/1.108840

DO - 10.1063/1.108840

M3 - Article

AN - SCOPUS:0001113229

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VL - 62

SP - 687

EP - 689

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

X-ray and Raman scattering characterization of Ge/Si buried layers

Abstract

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