X-ray and Raman scattering characterization of Ge/Si buried layers

R. L. Headrick*, J. M. Baribeau, D. J. Lockwood, T. E. Jackman, M. J. Bedzyk

*Corresponding author for this work

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

Germanium buried layers in (001) oriented silicon with thicknesses of 2-12 monolayers have been studied with synchrotron x-ray diffraction, x-ray reflectivity, and Raman scattering spectroscopy of visible light. Relaxation, strain, and intermixing have been observed via diffraction and intermixing is inferred from vibrational frequency shifts.

Original languageEnglish (US)
Pages (from-to)687-689
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number7
DOIs
StatePublished - 1993

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'X-ray and Raman scattering characterization of Ge/Si buried layers'. Together they form a unique fingerprint.

  • Cite this

    Headrick, R. L., Baribeau, J. M., Lockwood, D. J., Jackman, T. E., & Bedzyk, M. J. (1993). X-ray and Raman scattering characterization of Ge/Si buried layers. Applied Physics Letters, 62(7), 687-689. https://doi.org/10.1063/1.108840