X-ray diffraction measurement of segregation-induced interface broadening in InxGa1-xAs/GaAs super-lattices

P. Yashar*, M. R. Pillai, J. Mirecki-Millunchick, S. A. Barnett

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

X-ray diffraction θ-2θ scans and kinematical simulations were used to study the composition modulation in coherently strained ten period InxGa1-xAs/GaAs superlattices grown by molecular beam epitaxy (MBE). Superlattice periods (Λ) were 34.5, 55.0, and 92.0 Å, each with nominally 10-Å-thick In0.5Ga0.5As layers. Simulations using exponential In composition modulations, as expected due to In segregation during MBE growth, produced the best fits to the experimental data. The measured 1/e segregation lengths ranged from 11 to 16 Å. Since this distance was larger than the InGaAs layer thickness, the maximum In concentration reached in the samples was only x ≈0.20-0.25. For the Λ= 34.5 Å sample, since the GaAs layer was also thin, the composition modulation varied with each period of the superlattice. The simulation also showed layer thickness fluctuations which varied from 1.0 to 2.0 Å for the InGaAs layers and 2.0-3.0 Å for the GaAs layers.

Original languageEnglish (US)
Pages (from-to)2010-2013
Number of pages4
JournalJournal of Applied Physics
Volume83
Issue number4
DOIs
StatePublished - Feb 15 1998

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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