X-ray diffraction topography of deformation accompanying laser drilling of silicon

S. R. Stock; M. Greenstein; J. M. Rigsbee

doi:10.1016/0167-577X(88)90131-0

X-ray diffraction topography of deformation accompanying laser drilling of silicon

S. R. Stock^*, M. Greenstein, J. M. Rigsbee

^*Corresponding author for this work

Cell & Developmental Biology

Research output: Contribution to journal › Article › peer-review

Abstract

X-ray diffraction topography was used to study laser drilling of (001) silicon. Double crystal, Lang projection and section topography were used to characterize the deformation surrounding holes drilled with a Nd/YAG laser operated at various energy densities. Scanning electron microscopy showed significantly different hole wall morphologies, and the relationship between these structures and the resulting strain field was investigated. This preliminary study indicated the feasibility of using section topography to quantify and map the different components of strain around laser-drilled holes in silicon.

Original language	English (US)
Pages (from-to)	87-93
Number of pages	7
Journal	Materials Letters
Volume	7
Issue number	3
DOIs	https://doi.org/10.1016/0167-577X(88)90131-0
State	Published - Sep 1988

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/0167-577X(88)90131-0

Cite this

@article{d6857790ee84495b8e1773004906e110,

title = "X-ray diffraction topography of deformation accompanying laser drilling of silicon",

abstract = "X-ray diffraction topography was used to study laser drilling of (001) silicon. Double crystal, Lang projection and section topography were used to characterize the deformation surrounding holes drilled with a Nd/YAG laser operated at various energy densities. Scanning electron microscopy showed significantly different hole wall morphologies, and the relationship between these structures and the resulting strain field was investigated. This preliminary study indicated the feasibility of using section topography to quantify and map the different components of strain around laser-drilled holes in silicon.",

author = "Stock, {S. R.} and M. Greenstein and Rigsbee, {J. M.}",

note = "Funding Information: We acknowledgues eof the facilitieso f the MRL Centerf or Microanalysiso f Materials,U niversityo f Illinois, which is supporteda s a nationalf acility by the MaterialsS ciencesD ivision of theU nited States Departmento f Energy under contract DE-AC02-76ERO198W. e alsoa cknowledgMe r. F.J. Scheltens for his help with the SEM.",

year = "1988",

month = sep,

doi = "10.1016/0167-577X(88)90131-0",

language = "English (US)",

volume = "7",

pages = "87--93",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier",

number = "3",

}

TY - JOUR

T1 - X-ray diffraction topography of deformation accompanying laser drilling of silicon

AU - Stock, S. R.

AU - Greenstein, M.

AU - Rigsbee, J. M.

N1 - Funding Information: We acknowledgues eof the facilitieso f the MRL Centerf or Microanalysiso f Materials,U niversityo f Illinois, which is supporteda s a nationalf acility by the MaterialsS ciencesD ivision of theU nited States Departmento f Energy under contract DE-AC02-76ERO198W. e alsoa cknowledgMe r. F.J. Scheltens for his help with the SEM.

PY - 1988/9

Y1 - 1988/9

N2 - X-ray diffraction topography was used to study laser drilling of (001) silicon. Double crystal, Lang projection and section topography were used to characterize the deformation surrounding holes drilled with a Nd/YAG laser operated at various energy densities. Scanning electron microscopy showed significantly different hole wall morphologies, and the relationship between these structures and the resulting strain field was investigated. This preliminary study indicated the feasibility of using section topography to quantify and map the different components of strain around laser-drilled holes in silicon.

AB - X-ray diffraction topography was used to study laser drilling of (001) silicon. Double crystal, Lang projection and section topography were used to characterize the deformation surrounding holes drilled with a Nd/YAG laser operated at various energy densities. Scanning electron microscopy showed significantly different hole wall morphologies, and the relationship between these structures and the resulting strain field was investigated. This preliminary study indicated the feasibility of using section topography to quantify and map the different components of strain around laser-drilled holes in silicon.

UR - http://www.scopus.com/inward/record.url?scp=0024071368&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024071368&partnerID=8YFLogxK

U2 - 10.1016/0167-577X(88)90131-0

DO - 10.1016/0167-577X(88)90131-0

M3 - Article

AN - SCOPUS:0024071368

VL - 7

SP - 87

EP - 93

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

IS - 3

ER -

X-ray diffraction topography of deformation accompanying laser drilling of silicon

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this