X-ray diffraction topography of deformation accompanying laser drilling of silicon

S. R. Stock; M. Greenstein; J. M. Rigsbee

doi:10.1016/0167-577X(88)90131-0

X-ray diffraction topography of deformation accompanying laser drilling of silicon

S. R. Stock^*, M. Greenstein, J. M. Rigsbee

^*Corresponding author for this work

Cell & Developmental Biology

Research output: Contribution to journal › Article › peer-review

Abstract

X-ray diffraction topography was used to study laser drilling of (001) silicon. Double crystal, Lang projection and section topography were used to characterize the deformation surrounding holes drilled with a Nd/YAG laser operated at various energy densities. Scanning electron microscopy showed significantly different hole wall morphologies, and the relationship between these structures and the resulting strain field was investigated. This preliminary study indicated the feasibility of using section topography to quantify and map the different components of strain around laser-drilled holes in silicon.

Original language	English (US)
Pages (from-to)	87-93
Number of pages	7
Journal	Materials Letters
Volume	7
Issue number	3
DOIs	https://doi.org/10.1016/0167-577X(88)90131-0
State	Published - Sep 1988

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "X-ray diffraction topography of deformation accompanying laser drilling of silicon",

abstract = "X-ray diffraction topography was used to study laser drilling of (001) silicon. Double crystal, Lang projection and section topography were used to characterize the deformation surrounding holes drilled with a Nd/YAG laser operated at various energy densities. Scanning electron microscopy showed significantly different hole wall morphologies, and the relationship between these structures and the resulting strain field was investigated. This preliminary study indicated the feasibility of using section topography to quantify and map the different components of strain around laser-drilled holes in silicon.",

author = "Stock, {S. R.} and M. Greenstein and Rigsbee, {J. M.}",

year = "1988",

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AU - Greenstein, M.

AU - Rigsbee, J. M.

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AB - X-ray diffraction topography was used to study laser drilling of (001) silicon. Double crystal, Lang projection and section topography were used to characterize the deformation surrounding holes drilled with a Nd/YAG laser operated at various energy densities. Scanning electron microscopy showed significantly different hole wall morphologies, and the relationship between these structures and the resulting strain field was investigated. This preliminary study indicated the feasibility of using section topography to quantify and map the different components of strain around laser-drilled holes in silicon.

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