X-ray induced, substrate-carrier mediated deposition of metal on GaAs

Qing Ma*, R. Divan, D. C. Mancini, R. A. Rosenberg, J. P. Quintana, D. T. Keane

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

A wet metal deposition process on GaAs surfaces is described. The process is induced by high energy x-ray photons and is mediated by photon-generated carriers through the photoelectrochemical mechanism similar to that for light-induced wet etching. The micrometer to submicrometer feature fabrication using this process is demonstrated.

Original languageEnglish (US)
Article number083114
JournalApplied Physics Letters
Volume89
Issue number8
DOIs
StatePublished - Aug 31 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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