X-ray induced, substrate-carrier mediated deposition of metal on GaAs

Qing Ma; R. Divan; D. C. Mancini; R. A. Rosenberg; J. P. Quintana; D. T. Keane

doi:10.1063/1.2336592

X-ray induced, substrate-carrier mediated deposition of metal on GaAs

Qing Ma^*, R. Divan, D. C. Mancini, R. A. Rosenberg, J. P. Quintana, D. T. Keane

^*Corresponding author for this work

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Abstract

A wet metal deposition process on GaAs surfaces is described. The process is induced by high energy x-ray photons and is mediated by photon-generated carriers through the photoelectrochemical mechanism similar to that for light-induced wet etching. The micrometer to submicrometer feature fabrication using this process is demonstrated.

Original language	English (US)
Article number	083114
Journal	Applied Physics Letters
Volume	89
Issue number	8
DOIs	https://doi.org/10.1063/1.2336592
State	Published - 2006

Funding

The authors would like to thank Julie Alderman and Maria Petra for their help on radiation dose measurements, and Lahsen Assoufid for AFM measurements. Part of this work was performed at the DND-CAT at Sector 5 of the Advanced Photon Source. Part of this work was carried out at the Center for Nanoscale Materials, Argonne National Laboratory. DND-CAT is supported by the E.I. DuPont de Nemours & Co., the Dow Chemical Company, the U.S. National Science Foundation through Grant No. DMR-9304725, and the State of Illinois through the Department of Commerce and the Board of Higher Education Grant No. IBHE HECA NWU 96. The APS and the ANL are supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. W-31-109-Eng-38.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2336592

Cite this

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title = "X-ray induced, substrate-carrier mediated deposition of metal on GaAs",

abstract = "A wet metal deposition process on GaAs surfaces is described. The process is induced by high energy x-ray photons and is mediated by photon-generated carriers through the photoelectrochemical mechanism similar to that for light-induced wet etching. The micrometer to submicrometer feature fabrication using this process is demonstrated.",

author = "Qing Ma and R. Divan and Mancini, \{D. C.\} and Rosenberg, \{R. A.\} and Quintana, \{J. P.\} and Keane, \{D. T.\}",

note = "Funding Information: The authors would like to thank Julie Alderman and Maria Petra for their help on radiation dose measurements, and Lahsen Assoufid for AFM measurements. Part of this work was performed at the DND-CAT at Sector 5 of the Advanced Photon Source. Part of this work was carried out at the Center for Nanoscale Materials, Argonne National Laboratory. DND-CAT is supported by the E.I. DuPont de Nemours \& Co., the Dow Chemical Company, the U.S. National Science Foundation through Grant No. DMR-9304725, and the State of Illinois through the Department of Commerce and the Board of Higher Education Grant No. IBHE HECA NWU 96. The APS and the ANL are supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. W-31-109-Eng-38.",

year = "2006",

doi = "10.1063/1.2336592",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

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T1 - X-ray induced, substrate-carrier mediated deposition of metal on GaAs

AU - Ma, Qing

AU - Divan, R.

AU - Mancini, D. C.

AU - Rosenberg, R. A.

AU - Quintana, J. P.

AU - Keane, D. T.

N1 - Funding Information: The authors would like to thank Julie Alderman and Maria Petra for their help on radiation dose measurements, and Lahsen Assoufid for AFM measurements. Part of this work was performed at the DND-CAT at Sector 5 of the Advanced Photon Source. Part of this work was carried out at the Center for Nanoscale Materials, Argonne National Laboratory. DND-CAT is supported by the E.I. DuPont de Nemours & Co., the Dow Chemical Company, the U.S. National Science Foundation through Grant No. DMR-9304725, and the State of Illinois through the Department of Commerce and the Board of Higher Education Grant No. IBHE HECA NWU 96. The APS and the ANL are supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. W-31-109-Eng-38.

PY - 2006

Y1 - 2006

N2 - A wet metal deposition process on GaAs surfaces is described. The process is induced by high energy x-ray photons and is mediated by photon-generated carriers through the photoelectrochemical mechanism similar to that for light-induced wet etching. The micrometer to submicrometer feature fabrication using this process is demonstrated.

AB - A wet metal deposition process on GaAs surfaces is described. The process is induced by high energy x-ray photons and is mediated by photon-generated carriers through the photoelectrochemical mechanism similar to that for light-induced wet etching. The micrometer to submicrometer feature fabrication using this process is demonstrated.

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ER -

X-ray induced, substrate-carrier mediated deposition of metal on GaAs

Abstract

Funding

ASJC Scopus subject areas

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