X-ray induced, substrate-carrier mediated deposition of metal on GaAs

Qing Ma*, R. Divan, D. C. Mancini, R. A. Rosenberg, J. P. Quintana, D. T. Keane

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

A wet metal deposition process on GaAs surfaces is described. The process is induced by high energy x-ray photons and is mediated by photon-generated carriers through the photoelectrochemical mechanism similar to that for light-induced wet etching. The micrometer to submicrometer feature fabrication using this process is demonstrated.

Original languageEnglish (US)
Article number083114
JournalApplied Physics Letters
Volume89
Issue number8
DOIs
StatePublished - 2006

Funding

The authors would like to thank Julie Alderman and Maria Petra for their help on radiation dose measurements, and Lahsen Assoufid for AFM measurements. Part of this work was performed at the DND-CAT at Sector 5 of the Advanced Photon Source. Part of this work was carried out at the Center for Nanoscale Materials, Argonne National Laboratory. DND-CAT is supported by the E.I. DuPont de Nemours & Co., the Dow Chemical Company, the U.S. National Science Foundation through Grant No. DMR-9304725, and the State of Illinois through the Department of Commerce and the Board of Higher Education Grant No. IBHE HECA NWU 96. The APS and the ANL are supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. W-31-109-Eng-38.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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