X-ray scattering studies of interfacial microstructures in InxGa1-xAs/GaAs superlattices

Z. H. Ming*, Y. L. Soo, S. Huang, Y. H. Kao, K. Stair, G. Devane, C. Choi-Feng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Interfacial microstructures in 100-period InxGa1-xAs(15angstrom)/GaAs(100angstrom) superlattices grown on GaAs (100) substrates by molecular beam epitaxy were studied by using large angle x-ray scattering techniques. Unusual satellite peaks in the lateral direction parallel to the sample surface were observed in a sample with x = 0.535 grown at 480°C, indicating an in-plane structural ordering. This result is confirmed by high resolution transmission electron microscopy observations that thickness modulation in the InxGa1-xAs layers gives rise to long-range lateral periodic arrays of cluster-like microstructures with spacing on the order of a few hundred Angstroms. This thickness modulation is found to occur only in [110] direction, thus the material can be viewed as a somewhat disordered array of grown-in parallel quantum wires.

Original languageEnglish (US)
Pages (from-to)171-176
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume375
StatePublished - Jan 1 1995

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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