X-RAY STANDING WAVE ANALYSIS FOR BROMINE CHEMISORBED ON SILICON.

M. J. Bedzyk*, W. M. Gibson, J. A. Golovchenko

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

36 Scopus citations

Abstract

X-ray standing wave measurements on single crystals of silicon are employed to determine the coverage and position of chemisorbed bromine. Detailed analysis of the position information leads to the conclusion that silicon surface atoms bonded to adsorbed bromine atoms are in extrapolated bulk-line positions. Direct measurement of the desorption of correlated bromine in air demonstrates the high stability of the Br/Si surface interface.

Original languageEnglish (US)
Pages (from-to)634-637
Number of pages4
JournalJournal of vacuum science & technology
Volume20
Issue number3
DOIs
StatePublished - 1981
EventProc of the Natl Symp of the Am Vac Soc, Pt 1 - Anaheim, Calif, USA
Duration: Nov 2 1981Nov 6 1981

ASJC Scopus subject areas

  • Engineering(all)

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