X-RAY STANDING WAVE ANALYSIS FOR BROMINE CHEMISORBED ON SILICON.

M. J. Bedzyk; W. M. Gibson; J. A. Golovchenko

doi:10.1116/1.571412

X-RAY STANDING WAVE ANALYSIS FOR BROMINE CHEMISORBED ON SILICON.

M. J. Bedzyk^*, W. M. Gibson, J. A. Golovchenko

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

36 Scopus citations

Abstract

X-ray standing wave measurements on single crystals of silicon are employed to determine the coverage and position of chemisorbed bromine. Detailed analysis of the position information leads to the conclusion that silicon surface atoms bonded to adsorbed bromine atoms are in extrapolated bulk-line positions. Direct measurement of the desorption of correlated bromine in air demonstrates the high stability of the Br/Si surface interface.

Original language	English (US)
Pages (from-to)	634-637
Number of pages	4
Journal	Journal of vacuum science & technology
Volume	20
Issue number	3
DOIs	https://doi.org/10.1116/1.571412
State	Published - 1981
Event	Proc of the Natl Symp of the Am Vac Soc, Pt 1 - Anaheim, Calif, USA Duration: Nov 2 1981 → Nov 6 1981

ASJC Scopus subject areas

General Engineering

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title = "X-RAY STANDING WAVE ANALYSIS FOR BROMINE CHEMISORBED ON SILICON.",

abstract = "X-ray standing wave measurements on single crystals of silicon are employed to determine the coverage and position of chemisorbed bromine. Detailed analysis of the position information leads to the conclusion that silicon surface atoms bonded to adsorbed bromine atoms are in extrapolated bulk-line positions. Direct measurement of the desorption of correlated bromine in air demonstrates the high stability of the Br/Si surface interface.",

author = "Bedzyk, {M. J.} and Gibson, {W. M.} and Golovchenko, {J. A.}",

year = "1981",

doi = "10.1116/1.571412",

language = "English (US)",

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pages = "634--637",

journal = "Journal of vacuum science & technology",

issn = "0022-5355",

publisher = "American Institute of Physics",

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note = "Proc of the Natl Symp of the Am Vac Soc, Pt 1 ; Conference date: 02-11-1981 Through 06-11-1981",

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AU - Bedzyk, M. J.

AU - Gibson, W. M.

AU - Golovchenko, J. A.

PY - 1981

Y1 - 1981

N2 - X-ray standing wave measurements on single crystals of silicon are employed to determine the coverage and position of chemisorbed bromine. Detailed analysis of the position information leads to the conclusion that silicon surface atoms bonded to adsorbed bromine atoms are in extrapolated bulk-line positions. Direct measurement of the desorption of correlated bromine in air demonstrates the high stability of the Br/Si surface interface.

AB - X-ray standing wave measurements on single crystals of silicon are employed to determine the coverage and position of chemisorbed bromine. Detailed analysis of the position information leads to the conclusion that silicon surface atoms bonded to adsorbed bromine atoms are in extrapolated bulk-line positions. Direct measurement of the desorption of correlated bromine in air demonstrates the high stability of the Br/Si surface interface.

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DO - 10.1116/1.571412

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AN - SCOPUS:0019535709

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EP - 637

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JF - Journal of vacuum science & technology

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T2 - Proc of the Natl Symp of the Am Vac Soc, Pt 1

Y2 - 2 November 1981 through 6 November 1981

ER -

X-RAY STANDING WAVE ANALYSIS FOR BROMINE CHEMISORBED ON SILICON.

Abstract

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