X-ray standing wave imaging of the 1/3 monolayer Sn/Ge(111) surface

J. S. Okasinski; C. Y. Kim; D. A. Walko; Michael J Bedzyk

doi:10.1103/PhysRevB.69.041401

X-ray standing wave imaging of the 1/3 monolayer Sn/Ge(111) surface

J. S. Okasinski, C. Y. Kim, D. A. Walko, Michael J Bedzyk

Materials Science and Engineering

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45 Scopus citations

Abstract

X-ray standing waves (XSW) are used to measure the structure of the(√3 × √3)R 30° to (3 × 3)low-temperature phase transition for the 1/3 monolayer Sn/Ge(111) surface. A three-dimensional direct-space imaging approach, based on the summation of several hklXSW-measured Fourier coefficients, is demonstrated. At room temperature, the Sn atoms are found to occupy the T₄-adsorption sites with one-third of the Sn atoms 0.45 Å higher than the remaining two-thirds. The (3 × 3)phase has no significant change in the XSW-measured structural parameters. This is consistent with an order-disorder-type phase transition.

Original language	English (US)
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	69
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.69.041401
State	Published - Jan 8 2004

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.69.041401

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title = "X-ray standing wave imaging of the 1/3 monolayer Sn/Ge(111) surface",

abstract = "X-ray standing waves (XSW) are used to measure the structure of the(√3 × √3)R 30° to (3 × 3)low-temperature phase transition for the 1/3 monolayer Sn/Ge(111) surface. A three-dimensional direct-space imaging approach, based on the summation of several hklXSW-measured Fourier coefficients, is demonstrated. At room temperature, the Sn atoms are found to occupy the T4-adsorption sites with one-third of the Sn atoms 0.45 {\AA} higher than the remaining two-thirds. The (3 × 3)phase has no significant change in the XSW-measured structural parameters. This is consistent with an order-disorder-type phase transition.",

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T1 - X-ray standing wave imaging of the 1/3 monolayer Sn/Ge(111) surface

AU - Okasinski, J. S.

AU - Kim, C. Y.

AU - Walko, D. A.

AU - Bedzyk, Michael J

PY - 2004/1/8

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N2 - X-ray standing waves (XSW) are used to measure the structure of the(√3 × √3)R 30° to (3 × 3)low-temperature phase transition for the 1/3 monolayer Sn/Ge(111) surface. A three-dimensional direct-space imaging approach, based on the summation of several hklXSW-measured Fourier coefficients, is demonstrated. At room temperature, the Sn atoms are found to occupy the T4-adsorption sites with one-third of the Sn atoms 0.45 Å higher than the remaining two-thirds. The (3 × 3)phase has no significant change in the XSW-measured structural parameters. This is consistent with an order-disorder-type phase transition.

AB - X-ray standing waves (XSW) are used to measure the structure of the(√3 × √3)R 30° to (3 × 3)low-temperature phase transition for the 1/3 monolayer Sn/Ge(111) surface. A three-dimensional direct-space imaging approach, based on the summation of several hklXSW-measured Fourier coefficients, is demonstrated. At room temperature, the Sn atoms are found to occupy the T4-adsorption sites with one-third of the Sn atoms 0.45 Å higher than the remaining two-thirds. The (3 × 3)phase has no significant change in the XSW-measured structural parameters. This is consistent with an order-disorder-type phase transition.

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X-ray standing wave imaging of the 1/3 monolayer Sn/Ge(111) surface

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