X-ray standing wave study of Si/Ge/Si( 0 0 1 ) heterostructures grown with Bi as a surfactant

W. Rodrigues, B. P. Tinkham, O. Sakata, T. L. Lee, A. Kazimirov, M. J. Bedzyk*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


X-ray standing wave (XSW) analysis was used for an atomic-scale structural study of ultra-thin Si/Ge heterostructures grown on Si(0 0 1) by surfactant mediated epitaxy with Bi as the surfactant. XSW measurements were performed for the Si(0 0 4) and Si(0 2 2) Bragg reflections for Ge coverages from 1 to 10 monolayers. The measured Ge coherent positions agree with the calculated Ge positions for a tetragonally distorted Ge lattice formed on Si(0 0 1) using continuum elasticity theory. However, the measured Ge coherent fractions are smaller than expected. The quality of the Si cap layer and its registry with the underlying Si(0 0 1) substrate lattice was also determined by combining the XSW technique with evanescent-wave emission.

Original languageEnglish (US)
Pages (from-to)1-10
Number of pages10
JournalSurface Science
Issue number1-2
StatePublished - Apr 1 2003


  • Bismuth
  • Epitaxy
  • Germanium
  • Growth
  • Silicon
  • Surface defects
  • X-ray standing waves

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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