X-ray standing wave study of Si/Ge/Si( 0 0 1 ) heterostructures grown with Bi as a surfactant

W. Rodrigues; B. P. Tinkham; O. Sakata; T. L. Lee; A. Kazimirov; M. J. Bedzyk

doi:10.1016/S0039-6028(03)00303-0

X-ray standing wave study of Si/Ge/Si( 0 0 1 ) heterostructures grown with Bi as a surfactant

W. Rodrigues, B. P. Tinkham, O. Sakata, T. L. Lee, A. Kazimirov, M. J. Bedzyk^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

X-ray standing wave (XSW) analysis was used for an atomic-scale structural study of ultra-thin Si/Ge heterostructures grown on Si(0 0 1) by surfactant mediated epitaxy with Bi as the surfactant. XSW measurements were performed for the Si(0 0 4) and Si(0 2 2) Bragg reflections for Ge coverages from 1 to 10 monolayers. The measured Ge coherent positions agree with the calculated Ge positions for a tetragonally distorted Ge lattice formed on Si(0 0 1) using continuum elasticity theory. However, the measured Ge coherent fractions are smaller than expected. The quality of the Si cap layer and its registry with the underlying Si(0 0 1) substrate lattice was also determined by combining the XSW technique with evanescent-wave emission.

Original language	English (US)
Pages (from-to)	1-10
Number of pages	10
Journal	Surface Science
Volume	529
Issue number	1-2
DOIs	https://doi.org/10.1016/S0039-6028(03)00303-0
State	Published - Apr 1 2003

Keywords

Bismuth
Epitaxy
Germanium
Growth
Silicon
Surface defects
X-ray standing waves

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0039-6028(03)00303-0

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title = "X-ray standing wave study of Si/Ge/Si( 0 0 1 ) heterostructures grown with Bi as a surfactant",

abstract = "X-ray standing wave (XSW) analysis was used for an atomic-scale structural study of ultra-thin Si/Ge heterostructures grown on Si(0 0 1) by surfactant mediated epitaxy with Bi as the surfactant. XSW measurements were performed for the Si(0 0 4) and Si(0 2 2) Bragg reflections for Ge coverages from 1 to 10 monolayers. The measured Ge coherent positions agree with the calculated Ge positions for a tetragonally distorted Ge lattice formed on Si(0 0 1) using continuum elasticity theory. However, the measured Ge coherent fractions are smaller than expected. The quality of the Si cap layer and its registry with the underlying Si(0 0 1) substrate lattice was also determined by combining the XSW technique with evanescent-wave emission.",

keywords = "Bismuth, Epitaxy, Germanium, Growth, Silicon, Surface defects, X-ray standing waves",

author = "W. Rodrigues and Tinkham, {B. P.} and O. Sakata and Lee, {T. L.} and A. Kazimirov and Bedzyk, {M. J.}",

note = "Funding Information: We would like to thank D.L. Marasco and D.A. Walko for their help in setting up the XSW experiments. We are also grateful to P. Baldo at ANL for RBS measurements. The work was supported by the US Department of Energy/BES under contract W-31-109-Eng-38 to ANL and by the National Science Foundation under contracts DMR-0076097 and DMR-9973436, and by the State of Illinois under contract IBHE HECA NWU 96. ",

year = "2003",

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doi = "10.1016/S0039-6028(03)00303-0",

language = "English (US)",

volume = "529",

pages = "1--10",

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TY - JOUR

T1 - X-ray standing wave study of Si/Ge/Si( 0 0 1 ) heterostructures grown with Bi as a surfactant

AU - Rodrigues, W.

AU - Tinkham, B. P.

AU - Sakata, O.

AU - Lee, T. L.

AU - Kazimirov, A.

AU - Bedzyk, M. J.

N1 - Funding Information: We would like to thank D.L. Marasco and D.A. Walko for their help in setting up the XSW experiments. We are also grateful to P. Baldo at ANL for RBS measurements. The work was supported by the US Department of Energy/BES under contract W-31-109-Eng-38 to ANL and by the National Science Foundation under contracts DMR-0076097 and DMR-9973436, and by the State of Illinois under contract IBHE HECA NWU 96.

PY - 2003/4/1

Y1 - 2003/4/1

N2 - X-ray standing wave (XSW) analysis was used for an atomic-scale structural study of ultra-thin Si/Ge heterostructures grown on Si(0 0 1) by surfactant mediated epitaxy with Bi as the surfactant. XSW measurements were performed for the Si(0 0 4) and Si(0 2 2) Bragg reflections for Ge coverages from 1 to 10 monolayers. The measured Ge coherent positions agree with the calculated Ge positions for a tetragonally distorted Ge lattice formed on Si(0 0 1) using continuum elasticity theory. However, the measured Ge coherent fractions are smaller than expected. The quality of the Si cap layer and its registry with the underlying Si(0 0 1) substrate lattice was also determined by combining the XSW technique with evanescent-wave emission.

AB - X-ray standing wave (XSW) analysis was used for an atomic-scale structural study of ultra-thin Si/Ge heterostructures grown on Si(0 0 1) by surfactant mediated epitaxy with Bi as the surfactant. XSW measurements were performed for the Si(0 0 4) and Si(0 2 2) Bragg reflections for Ge coverages from 1 to 10 monolayers. The measured Ge coherent positions agree with the calculated Ge positions for a tetragonally distorted Ge lattice formed on Si(0 0 1) using continuum elasticity theory. However, the measured Ge coherent fractions are smaller than expected. The quality of the Si cap layer and its registry with the underlying Si(0 0 1) substrate lattice was also determined by combining the XSW technique with evanescent-wave emission.

KW - Bismuth

KW - Epitaxy

KW - Germanium

KW - Growth

KW - Silicon

KW - Surface defects

KW - X-ray standing waves

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JO - Surface Science

JF - Surface Science

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ER -

X-ray standing wave study of Si/Ge/Si( 0 0 1 ) heterostructures grown with Bi as a surfactant

Abstract

Keywords

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