Yb-doped InP has been prepared by metalorganic vapor phase epitaxy using a Yb fluorinated beta-diketonate. The doped layers were n type with carrier concentrations ranging from 0.6 to 17×1015 cm -3. The doped layers exhibited the characteristic Yb +3-4f photoluminescent emission at 1.23 eV. The low-temperature photoluminescence indicates the association of Yb with other centers to form complexes.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)