Yb-doped InP grown by metalorganic vapor phase epitaxy using a beta-diketonate precursor

D. M. Williams*, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Yb-doped InP has been prepared by metalorganic vapor phase epitaxy using a Yb fluorinated beta-diketonate. The doped layers were n type with carrier concentrations ranging from 0.6 to 17×1015 cm -3. The doped layers exhibited the characteristic Yb +3-4f photoluminescent emission at 1.23 eV. The low-temperature photoluminescence indicates the association of Yb with other centers to form complexes.

Original languageEnglish (US)
Pages (from-to)566-568
Number of pages3
JournalApplied Physics Letters
Volume56
Issue number6
DOIs
StatePublished - 1990

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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