Yb-doped InP grown by metalorganic vapor phase epitaxy using a beta-diketonate precursor

D. M. Williams; B. W. Wessels

doi:10.1063/1.102746

Yb-doped InP grown by metalorganic vapor phase epitaxy using a beta-diketonate precursor

D. M. Williams^*, B. W. Wessels

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Yb-doped InP has been prepared by metalorganic vapor phase epitaxy using a Yb fluorinated beta-diketonate. The doped layers were n type with carrier concentrations ranging from 0.6 to 17×10¹⁵ cm ^-3. The doped layers exhibited the characteristic Yb ⁺³-4f photoluminescent emission at 1.23 eV. The low-temperature photoluminescence indicates the association of Yb with other centers to form complexes.

Original language	English (US)
Pages (from-to)	566-568
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	6
DOIs	https://doi.org/10.1063/1.102746
State	Published - 1990

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Yb-doped InP grown by metalorganic vapor phase epitaxy using a beta-diketonate precursor",

abstract = "Yb-doped InP has been prepared by metalorganic vapor phase epitaxy using a Yb fluorinated beta-diketonate. The doped layers were n type with carrier concentrations ranging from 0.6 to 17×1015 cm -3. The doped layers exhibited the characteristic Yb +3-4f photoluminescent emission at 1.23 eV. The low-temperature photoluminescence indicates the association of Yb with other centers to form complexes.",

author = "Williams, {D. M.} and Wessels, {B. W.}",

year = "1990",

doi = "10.1063/1.102746",

language = "English (US)",

volume = "56",

pages = "566--568",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

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TY - JOUR

T1 - Yb-doped InP grown by metalorganic vapor phase epitaxy using a beta-diketonate precursor

AU - Williams, D. M.

AU - Wessels, B. W.

PY - 1990

Y1 - 1990

N2 - Yb-doped InP has been prepared by metalorganic vapor phase epitaxy using a Yb fluorinated beta-diketonate. The doped layers were n type with carrier concentrations ranging from 0.6 to 17×1015 cm -3. The doped layers exhibited the characteristic Yb +3-4f photoluminescent emission at 1.23 eV. The low-temperature photoluminescence indicates the association of Yb with other centers to form complexes.

AB - Yb-doped InP has been prepared by metalorganic vapor phase epitaxy using a Yb fluorinated beta-diketonate. The doped layers were n type with carrier concentrations ranging from 0.6 to 17×1015 cm -3. The doped layers exhibited the characteristic Yb +3-4f photoluminescent emission at 1.23 eV. The low-temperature photoluminescence indicates the association of Yb with other centers to form complexes.

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U2 - 10.1063/1.102746

DO - 10.1063/1.102746

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Yb-doped InP grown by metalorganic vapor phase epitaxy using a beta-diketonate precursor

Abstract

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