YBa2Cu3O7-x 45° [001] Tilt Grain Boundaries Induced by Controlled Low-Energy Sputtering of MgO Substrates: Transport Properties and Atomic-Scale Structure

Boris V. Vuchic; Karl L. Merkle; Jeffrey W. Funkhouser; Kenneth A. Dean; Robert P H Chang; Laurence D. Marks; D. Bruce Buchholz

doi:10.1109/77.402782

YBa2Cu3O7-x 45° [001] Tilt Grain Boundaries Induced by Controlled Low-Energy Sputtering of MgO Substrates: Transport Properties and Atomic-Scale Structure

Boris V. Vuchic, Karl L. Merkle, Jeffrey W. Funkhouser, Kenneth A. Dean, Robert P H Chang, Laurence D. Marks, D. Bruce Buchholz

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Grain boundaries can act as weak links in the high Tcmaterials. If properly controlled, these grain boundaries can be used in various device applications. We have been able to reproducibly form 45° [001] tilt grain boundary junctions in YBa2Cu3O7-xthin films. The films were grown on MgO substrates using a pregrowth substrate treatment. A low energy broad beam Argon ion source was used to irradiate a select region of (100) MgO substrates. The film on the milled portion of the substrate grows predominantly with a grain orientation rotated 45° about the c-axis with respect to the grain on the unmilled portion. Backscattered electron Kikuchi patterns have been used to confirm that the rotation occurs across the entire milled portion of the substrate. Transport properties of these films are discussed and related to high resolution electron microstructural and microchemical analyses of the grain boundaries. This technique has potential use in device applications as a method for controlled grain boundary engineering.

Original language	English (US)
Pages (from-to)	1225-1228
Number of pages	4
Journal	IEEE Transactions on Applied Superconductivity
Volume	5
Issue number	2
DOIs	https://doi.org/10.1109/77.402782
State	Published - Jun 1995

Funding

Manuscript received Oaober 17,1994 This work was supported by the National Science Foundation Office of Science and Technology Centers, under cmtract #DMR 91 -2oooOa nd the U.S. Department of Energy. Basic Energy Sciences-MaterialsS cience, under Contract #W-31-109-Eh'G-38.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/77.402782

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Vuchic, B. V., Merkle, K. L., Funkhouser, J. W., Dean, K. A., Chang, R. P. H., Marks, L. D., & Bruce Buchholz, D. (1995). YBa2Cu3O7-x 45° [001] Tilt Grain Boundaries Induced by Controlled Low-Energy Sputtering of MgO Substrates: Transport Properties and Atomic-Scale Structure. IEEE Transactions on Applied Superconductivity, 5(2), 1225-1228. https://doi.org/10.1109/77.402782

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title = "YBa2Cu3O7-x 45° [001] Tilt Grain Boundaries Induced by Controlled Low-Energy Sputtering of MgO Substrates: Transport Properties and Atomic-Scale Structure",

abstract = "Grain boundaries can act as weak links in the high Tcmaterials. If properly controlled, these grain boundaries can be used in various device applications. We have been able to reproducibly form 45° [001] tilt grain boundary junctions in YBa2Cu3O7-xthin films. The films were grown on MgO substrates using a pregrowth substrate treatment. A low energy broad beam Argon ion source was used to irradiate a select region of (100) MgO substrates. The film on the milled portion of the substrate grows predominantly with a grain orientation rotated 45° about the c-axis with respect to the grain on the unmilled portion. Backscattered electron Kikuchi patterns have been used to confirm that the rotation occurs across the entire milled portion of the substrate. Transport properties of these films are discussed and related to high resolution electron microstructural and microchemical analyses of the grain boundaries. This technique has potential use in device applications as a method for controlled grain boundary engineering.",

author = "Vuchic, {Boris V.} and Merkle, {Karl L.} and Funkhouser, {Jeffrey W.} and Dean, {Kenneth A.} and Chang, {Robert P H} and Marks, {Laurence D.} and {Bruce Buchholz}, D.",

note = "Funding Information: Manuscript received Oaober 17,1994 This work was supported by the National Science Foundation Office of Science and Technology Centers, under cmtract #DMR 91 -2oooOa nd the U.S. Department of Energy. Basic Energy Sciences-MaterialsS cience, under Contract #W-31-109-Eh'G-38.",

year = "1995",

month = jun,

doi = "10.1109/77.402782",

language = "English (US)",

volume = "5",

pages = "1225--1228",

journal = "IEEE Transactions on Applied Superconductivity",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

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YBa2Cu3O7-x 45° [001] Tilt Grain Boundaries Induced by Controlled Low-Energy Sputtering of MgO Substrates: Transport Properties and Atomic-Scale Structure. / Vuchic, Boris V.; Merkle, Karl L.; Funkhouser, Jeffrey W. et al.
In: IEEE Transactions on Applied Superconductivity, Vol. 5, No. 2, 06.1995, p. 1225-1228.

Research output: Contribution to journal › Article › peer-review

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AU - Chang, Robert P H

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AU - Bruce Buchholz, D.

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N2 - Grain boundaries can act as weak links in the high Tcmaterials. If properly controlled, these grain boundaries can be used in various device applications. We have been able to reproducibly form 45° [001] tilt grain boundary junctions in YBa2Cu3O7-xthin films. The films were grown on MgO substrates using a pregrowth substrate treatment. A low energy broad beam Argon ion source was used to irradiate a select region of (100) MgO substrates. The film on the milled portion of the substrate grows predominantly with a grain orientation rotated 45° about the c-axis with respect to the grain on the unmilled portion. Backscattered electron Kikuchi patterns have been used to confirm that the rotation occurs across the entire milled portion of the substrate. Transport properties of these films are discussed and related to high resolution electron microstructural and microchemical analyses of the grain boundaries. This technique has potential use in device applications as a method for controlled grain boundary engineering.

AB - Grain boundaries can act as weak links in the high Tcmaterials. If properly controlled, these grain boundaries can be used in various device applications. We have been able to reproducibly form 45° [001] tilt grain boundary junctions in YBa2Cu3O7-xthin films. The films were grown on MgO substrates using a pregrowth substrate treatment. A low energy broad beam Argon ion source was used to irradiate a select region of (100) MgO substrates. The film on the milled portion of the substrate grows predominantly with a grain orientation rotated 45° about the c-axis with respect to the grain on the unmilled portion. Backscattered electron Kikuchi patterns have been used to confirm that the rotation occurs across the entire milled portion of the substrate. Transport properties of these films are discussed and related to high resolution electron microstructural and microchemical analyses of the grain boundaries. This technique has potential use in device applications as a method for controlled grain boundary engineering.

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YBa2Cu3O7-x 45° [001] Tilt Grain Boundaries Induced by Controlled Low-Energy Sputtering of MgO Substrates: Transport Properties and Atomic-Scale Structure

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