The cosubstituted solid solution In2-2xSnxZnxO3-δ was acceptor-doped with Zn2+ to form In2-x-ySnxZnyO3-δ (y > x). A 4% Zn2+ "excess" can be introduced in In1.6Sn0.2Zn0.2O3-δ while maintaining the bixbyite structure. The n-type conductivity of the doped material decreases with zinc substitution. Zn-doped In1.6Sn0.2Zn0.2O3-δ was annealed under high oxygen pressure (∼170 atm) to eliminate anion vacancies, VO••. Owing to a decrease in carrier concentration by up to 2 orders of magnitude from 1020 to 1018 carriers/cm3, the conductivity of the annealed material decreases. Hall measurements show that the carriers remain as n-type. The results imply the existence of neutral Zn-VO•• complexes that prevent the donation of holes by Zn2+.
|Original language||English (US)|
|Number of pages||6|
|Journal||Chemistry of Materials|
|State||Published - Mar 26 2002|
ASJC Scopus subject areas
- Chemical Engineering(all)
- Materials Chemistry