Zinc doping in cosubstituted In2-2xSnxZnxO3-δ

A. Ambrosini, S. Malo, K. R. Poeppelmeier*, M. A. Lane, C. R. Kannewurf, T. O. Mason

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

41 Scopus citations


The cosubstituted solid solution In2-2xSnxZnxO3-δ was acceptor-doped with Zn2+ to form In2-x-ySnxZnyO3-δ (y > x). A 4% Zn2+ "excess" can be introduced in In1.6Sn0.2Zn0.2O3-δ while maintaining the bixbyite structure. The n-type conductivity of the doped material decreases with zinc substitution. Zn-doped In1.6Sn0.2Zn0.2O3-δ was annealed under high oxygen pressure (∼170 atm) to eliminate anion vacancies, VO••. Owing to a decrease in carrier concentration by up to 2 orders of magnitude from 1020 to 1018 carriers/cm3, the conductivity of the annealed material decreases. Hall measurements show that the carriers remain as n-type. The results imply the existence of neutral Zn-VO•• complexes that prevent the donation of holes by Zn2+.

Original languageEnglish (US)
Pages (from-to)58-63
Number of pages6
JournalChemistry of Materials
Issue number1
StatePublished - Mar 26 2002

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry


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