Zinc doping in cosubstituted In2-2xSnxZnxO3-δ

A. Ambrosini; S. Malo; K. R. Poeppelmeier; M. A. Lane; C. R. Kannewurf; T. O. Mason

doi:10.1021/cm010073x

Zinc doping in cosubstituted In_2-2xSn_xZn_xO_3-δ

A. Ambrosini, S. Malo, K. R. Poeppelmeier^*, M. A. Lane, C. R. Kannewurf, T. O. Mason

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

The cosubstituted solid solution In_2-2xSn_xZn_xO_3-δ was acceptor-doped with Zn²⁺ to form In_2-x-ySn_xZn_yO_3-δ (y > x). A 4% Zn²⁺ "excess" can be introduced in In_1.6Sn_0.2Zn_0.2O_3-δ while maintaining the bixbyite structure. The n-type conductivity of the doped material decreases with zinc substitution. Zn-doped In_1.6Sn_0.2Zn_0.2O_3-δ was annealed under high oxygen pressure (∼170 atm) to eliminate anion vacancies, V_O^••. Owing to a decrease in carrier concentration by up to 2 orders of magnitude from 10²⁰ to 10¹⁸ carriers/cm³, the conductivity of the annealed material decreases. Hall measurements show that the carriers remain as n-type. The results imply the existence of neutral Zn-V_O^•• complexes that prevent the donation of holes by Zn²⁺.

Original language	English (US)
Pages (from-to)	58-63
Number of pages	6
Journal	Chemistry of Materials
Volume	14
Issue number	1
DOIs	https://doi.org/10.1021/cm010073x
State	Published - 2002

ASJC Scopus subject areas

General Chemistry
General Chemical Engineering
Materials Chemistry

Access to Document

10.1021/cm010073x

Cite this

@article{f9701e20117f4de2820a8d24c92d7dd4,

title = "Zinc doping in cosubstituted In2-2xSnxZnxO3-δ",

abstract = "The cosubstituted solid solution In2-2xSnxZnxO3-δ was acceptor-doped with Zn2+ to form In2-x-ySnxZnyO3-δ (y > x). A 4% Zn2+ {"}excess{"} can be introduced in In1.6Sn0.2Zn0.2O3-δ while maintaining the bixbyite structure. The n-type conductivity of the doped material decreases with zinc substitution. Zn-doped In1.6Sn0.2Zn0.2O3-δ was annealed under high oxygen pressure (∼170 atm) to eliminate anion vacancies, VO••. Owing to a decrease in carrier concentration by up to 2 orders of magnitude from 1020 to 1018 carriers/cm3, the conductivity of the annealed material decreases. Hall measurements show that the carriers remain as n-type. The results imply the existence of neutral Zn-VO•• complexes that prevent the donation of holes by Zn2+.",

author = "A. Ambrosini and S. Malo and Poeppelmeier, {K. R.} and Lane, {M. A.} and Kannewurf, {C. R.} and Mason, {T. O.}",

year = "2002",

doi = "10.1021/cm010073x",

language = "English (US)",

volume = "14",

pages = "58--63",

journal = "Chemistry of Materials",

issn = "0897-4756",

publisher = "American Chemical Society",

number = "1",

}

TY - JOUR

T1 - Zinc doping in cosubstituted In2-2xSnxZnxO3-δ

AU - Ambrosini, A.

AU - Malo, S.

AU - Poeppelmeier, K. R.

AU - Lane, M. A.

AU - Kannewurf, C. R.

AU - Mason, T. O.

PY - 2002

Y1 - 2002

N2 - The cosubstituted solid solution In2-2xSnxZnxO3-δ was acceptor-doped with Zn2+ to form In2-x-ySnxZnyO3-δ (y > x). A 4% Zn2+ "excess" can be introduced in In1.6Sn0.2Zn0.2O3-δ while maintaining the bixbyite structure. The n-type conductivity of the doped material decreases with zinc substitution. Zn-doped In1.6Sn0.2Zn0.2O3-δ was annealed under high oxygen pressure (∼170 atm) to eliminate anion vacancies, VO••. Owing to a decrease in carrier concentration by up to 2 orders of magnitude from 1020 to 1018 carriers/cm3, the conductivity of the annealed material decreases. Hall measurements show that the carriers remain as n-type. The results imply the existence of neutral Zn-VO•• complexes that prevent the donation of holes by Zn2+.

AB - The cosubstituted solid solution In2-2xSnxZnxO3-δ was acceptor-doped with Zn2+ to form In2-x-ySnxZnyO3-δ (y > x). A 4% Zn2+ "excess" can be introduced in In1.6Sn0.2Zn0.2O3-δ while maintaining the bixbyite structure. The n-type conductivity of the doped material decreases with zinc substitution. Zn-doped In1.6Sn0.2Zn0.2O3-δ was annealed under high oxygen pressure (∼170 atm) to eliminate anion vacancies, VO••. Owing to a decrease in carrier concentration by up to 2 orders of magnitude from 1020 to 1018 carriers/cm3, the conductivity of the annealed material decreases. Hall measurements show that the carriers remain as n-type. The results imply the existence of neutral Zn-VO•• complexes that prevent the donation of holes by Zn2+.

UR - http://www.scopus.com/inward/record.url?scp=0036124649&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036124649&partnerID=8YFLogxK

U2 - 10.1021/cm010073x

DO - 10.1021/cm010073x

M3 - Article

AN - SCOPUS:0036124649

SN - 0897-4756

VL - 14

SP - 58

EP - 63

JO - Chemistry of Materials

JF - Chemistry of Materials

IS - 1

ER -

Zinc doping in cosubstituted In_2-2xSn_xZn_xO_3-δ

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this