Zinc oxide moves further into the ultraviolet

David J. Rogers, Philippe Bove, Eric V. Sandana, Ferechteh Hosseini Teherani, Ryan McClintock, Manijeh Razeghi

Research output: Contribution to specialist publicationArticle

1 Scopus citations

Abstract

Latest advancements in the alloying of zinc oxide (ZnO) with magnesium (Mg) can offer an alternative to (Al) GaN-based emitters/detectors in the deep UV with reduced lattice and efficiency issues. The emerging potential of ZnO for UV emitter and detector applications is the result of a long, concerted, and fruitful R&D effort that has led to more than 7000 publications in 2012. ZnO is considered to be a potentially superior material for use in LEDs and laser diodes due to its larger exciton binding energy, as compared with 21 meV for GaN. Wet etching is also possible for ZnO with nearly all dilute acids and alkalis, while GaN requires hydrofluoric (HF) acid or plasma etching. High-quality ZnO films can be grown more readily on mismatched substrates and bulk ZnO substrates have better availability than their GaN equivalents.

Original languageEnglish (US)
Pages33-36
Number of pages4
Volume49
No10
Specialist publicationLaser Focus World
StatePublished - Oct 1 2013

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Marketing
  • Electrical and Electronic Engineering

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