@inproceedings{2913baf0af844373878631fe79cd2ae9,
title = "ZnO nanowire field-effect transistors: Ozone-induced threshold voltage shift and multiple nanowire effects",
abstract = "ZnO nanowire field-effect transistors (NW-FETs) employing single nanowires were fabricated, using a self-assembled superlattice (SAS) as the gate insulator. Both depletion-mode and enhancement-mode ZnO NW-FETs were fabricated and characterized. An electrostatic model is proposed to describe observed threshold voltage shift upon optimum ozone treatment. Temperature-dependent current-voltage characteristics of depletion-mode ZnO NW-FETs verify this model, indicating the existence of body current through ZnO nanowires with low activation energy. In addition, NW-FETs that use multiple ZnO nanowires and a SiO2 gate insulator were fabricated to achieve higher on-current without significant degradation in on-off current ratio, threshold voltage shift, and subthreshold slopes.",
keywords = "Body current, Multiple nanowires, Schottky barrier, ZnO",
author = "Sanghyun Ju and Kangho Lee and Janes, {David B.} and Jianye Li and Chang, {R. P.H.} and Yoon, {Myung Han} and Antonio Facchetti and Marks, {Tobin J.}",
year = "2006",
language = "English (US)",
isbn = "1424400783",
series = "2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006",
pages = "445--448",
booktitle = "2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006",
note = "2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006 ; Conference date: 17-06-2006 Through 20-06-2006",
}