ZnO nanowire field-effect transistors: Ozone-induced threshold voltage shift and multiple nanowire effects

Sanghyun Ju*, Kangho Lee, David B. Janes, Jianye Li, R P H Chang, Myung Han Yoon, Antonio Facchetti, Tobin Jay Marks

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

ZnO nanowire field-effect transistors (NW-FETs) employing single nanowires were fabricated, using a self-assembled superlattice (SAS) as the gate insulator. Both depletion-mode and enhancement-mode ZnO NW-FETs were fabricated and characterized. An electrostatic model is proposed to describe observed threshold voltage shift upon optimum ozone treatment. Temperature-dependent current-voltage characteristics of depletion-mode ZnO NW-FETs verify this model, indicating the existence of body current through ZnO nanowires with low activation energy. In addition, NW-FETs that use multiple ZnO nanowires and a SiO2 gate insulator were fabricated to achieve higher on-current without significant degradation in on-off current ratio, threshold voltage shift, and subthreshold slopes.

Original languageEnglish (US)
Title of host publication2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006
Pages445-448
Number of pages4
StatePublished - Dec 1 2006
Event2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006 - Cincinnati, OH, United States
Duration: Jun 17 2006Jun 20 2006

Publication series

Name2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006
Volume2

Other

Other2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006
CountryUnited States
CityCincinnati, OH
Period6/17/066/20/06

Keywords

  • Body current
  • Multiple nanowires
  • Schottky barrier
  • ZnO

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

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