ZnO thin film templates for GaN-based devices

D. J. Rogers*, F. Hosseini Téherani, A. Yasan, R. McClintock, K. Mayes, S. R. Darvish, P. Kung, M. Razeghi, G. Garry

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

32 Scopus citations

Abstract

GaN-based optoelectronic devices are plagued by a tendency to non-radiative transitions linked to defects in the active layers. This problem has it's origin in a) intrinsic factors such as GaN's relatively low exciton binding energy (∼24meV) and b) extrinsic factors including the poor availability of native substrates good enough to significantly suppress the defect density. Indeed, the quality and availability of large-area bulk GaN substrates is currently considered a key problem for the continuing development of improved GaN-based devices. Since development of bulk GaN substrates of suitable quality has proven very difficult, a considerable amount of effort is also being directed towards the development of alternative substrates which offer advantages compared to those in widespread use (c-sapphire and 6H SiC). ZnO is promising as a substrate material for GaN because it has the same wurtzite structure and a relatively small lattice mismatch (∼1.8%). In this paper, we discuss use of ZnO thin films as templates for GaN based LED.

Original languageEnglish (US)
Article number61
Pages (from-to)412-416
Number of pages5
JournalProgress in Biomedical Optics and Imaging - Proceedings of SPIE
Volume5732
DOIs
StatePublished - Jul 21 2005
EventQuantum Sensing and Nanophotonic Devices II - San Jose, CA, United States
Duration: Jan 23 2005Jan 27 2005

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Atomic and Molecular Physics, and Optics
  • Radiology Nuclear Medicine and imaging

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